Deactivation and diffusion of boron in ion-implanted silicon: dopant mapping through secondary electron imaging
Secondary electron (SE) imaging in a scanning electron microscope is used to map electrically active dopant distributions of B-doped superlattices in Si. By comparing SE contrast profiles with secondary ion mass spectroscopy data, it is shown that B is electrically deactivated when the damage caused...
| Main Authors: | , , , , |
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| פורמט: | Conference item |
| יצא לאור: |
1999
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