Electronic structure of In2O3 from resonant x-ray emission spectroscopy

Electronic structure of In2O3 from resonant x-ray emission spectroscopy

The valence and conduction band structures of In2 O3 have been measured using a combination of valence band x-ray photoemission spectroscopy, O K -edge resonant x-ray emission spectroscopy, and O K -edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and...

詳細記述

書誌詳細
主要な著者: Piper, L, DeMasi, A, Cho, S, Smith, K, Fuchs, F, Bechstedt, F, Koerber, C, Klein, A, Payne, D, Egdell, R
フォーマット: Journal article
言語:English
出版事項: 2009
その他の書誌記述
要約:The valence and conduction band structures of In2 O3 have been measured using a combination of valence band x-ray photoemission spectroscopy, O K -edge resonant x-ray emission spectroscopy, and O K -edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In2 O3. © 2009 American Institute of Physics.

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