Landau assisted vertical transport in MQW p-i-n GaAs/AlGaAs diodes

We report studies of sequential resonant tunneling in GaAs/AlGaAs multi-quantum well p-i-n structures in the presence of parallel magnetic fields up to 15 T. New features are observed which are attributed to inter-Landau level resonances involving a change of Landau index of +1 and +2. In one of the...

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Bibliographic Details
Main Authors: Stone, R, Michels, J, Wong, S, Foxon, C, Nicholas, R, Fox, A
Format: Conference item
Published: 1996
Description
Summary:We report studies of sequential resonant tunneling in GaAs/AlGaAs multi-quantum well p-i-n structures in the presence of parallel magnetic fields up to 15 T. New features are observed which are attributed to inter-Landau level resonances involving a change of Landau index of +1 and +2. In one of the samples the tunnelling resonances saturate and shift with the magnetic field. This result may be related to the similar effects observed in coupled two-dimensional electron gases at high magnetic fields.