NEUTRON-IRRADIATION OF SILICON DIODES AT TEMPERATURES OF +20-DEGREES-C AND -20-DEGREES-C

NEUTRON-IRRADIATION OF SILICON DIODES AT TEMPERATURES OF +20-DEGREES-C AND -20-DEGREES-C

Opis bibliograficzny
Główni autorzy:	Anghinolfi, F, Bardos, R, Bates, S, Bonino, R, Clark, A, Claussen, N, Fretwurst, E, Glaser, M, Gorfine, G, Gossling, C, Heijne, E, Jarron, P, Klingenberg, R, Lemeilleur, F, Lindstrom, G, Moorhead, G, Munday, D, Occelli, E, Pagel, H, Papendick, B, Parker, M, Pollmann, D, Poppleton, A, Rolf, A, Scampoli, P
Format:	Conference item
Wydane:	1993

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