ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.
The EBIC mode of the SEM was used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means for t...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
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1982
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| _version_ | 1826285906530664448 |
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| author | Ourmazd, A Wilshaw, P Booker, G |
| author_facet | Ourmazd, A Wilshaw, P Booker, G |
| author_sort | Ourmazd, A |
| collection | OXFORD |
| description | The EBIC mode of the SEM was used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means for the determination of defect energy levels at high spatial resolution is proposed. First results of a project designed to yield information on the energy levels associated with dislocations in Si are described. The first direct electrical observation of the individual Shockley partials of dissociated dislocations is also reported. |
| first_indexed | 2024-03-07T01:35:51Z |
| format | Journal article |
| id | oxford-uuid:952914fd-4416-42b3-a3e2-4ebc3670f467 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T01:35:51Z |
| publishDate | 1982 |
| record_format | dspace |
| spelling | oxford-uuid:952914fd-4416-42b3-a3e2-4ebc3670f4672022-03-26T23:44:16ZELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:952914fd-4416-42b3-a3e2-4ebc3670f467EnglishSymplectic Elements at Oxford1982Ourmazd, AWilshaw, PBooker, GThe EBIC mode of the SEM was used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means for the determination of defect energy levels at high spatial resolution is proposed. First results of a project designed to yield information on the energy levels associated with dislocations in Si are described. The first direct electrical observation of the individual Shockley partials of dissociated dislocations is also reported. |
| spellingShingle | Ourmazd, A Wilshaw, P Booker, G ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON. |
| title | ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON. |
| title_full | ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON. |
| title_fullStr | ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON. |
| title_full_unstemmed | ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON. |
| title_short | ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON. |
| title_sort | electrical behaviour of individual dislocations shockley partials and stacking fault ribbons in silicon |
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