ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.

The EBIC mode of the SEM was used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means for t...

书目详细资料
Main Authors:	Ourmazd, A, Wilshaw, P, Booker, G
格式:	Journal article
语言:	English
出版:	1982

相似书籍

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
由: Ourmazd, A, et al.
出版: (1983)

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULTS.
由: Ourmazd, A, et al.
出版: (1982)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
由: Ourmazd, A, et al.
出版: (1983)

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
由: Ourmazd, A, et al.
出版: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM
由: Wilshaw, P, et al.
出版: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.
由: Wilshaw, P, et al.
出版: (1983)

NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
由: Wilshaw, P, et al.
出版: (1985)

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
由: Wilshaw, P, et al.
出版: (1989)

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
由: Wilshaw, P, et al.
出版: (1986)

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC
由: Ourmazd, A, et al.
出版: (1982)

The segregation behaviour of oxygen at dislocations in silicon
由: Senkader, S, et al.
出版: (1999)

GETTERING OF COPPER TO OXIDATION INDUCED STACKING-FAULTS IN SILICON
由: Decoteau, M, et al.
出版: (1990)

The Shockley–Queisser limit and the conversion efficiency of silicon-based solar cells
由: A.R. Zanatta
出版: (2022-12-01)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
由: Wilshaw, P, et al.
出版: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
由: Wilshaw, P, et al.
出版: (1989)

Stable Stacking Faults Bounded by Frank Partial Dislocations in Al7075 Formed through Precipitate and Dislocation Interactions
由: Sijie Li, et al.
出版: (2017-12-01)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
由: Fell, T, et al.
出版: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
由: Fell, T, et al.
出版: (1989)

An SEM EBIC study of the electronic properties of dislocations in silicon
由: Wilshaw, P, et al.
出版: (1984)

Observation of a blocking to channeling transition for MeV protons at stacking faults in silicon.
由: King, P, et al.
出版: (1995)

On a SHOCKLEY-READ-HALL model for semiconductors
由: Knežević-Miljanović Julka
出版: (2013-01-01)

On the locking of dislocations by oxygen in silicon
由: Senkader, S, et al.
出版: (2001)

Impurity locking of dislocations in silicon
由: Giannattasio, A, et al.
出版: (2004)

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
由: Giannattasio, A, et al.
出版: (2004)

Locking of dislocations by oxygen in Cz-silicon
由: Senkader, S, et al.
出版: (1999)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
由: Fell, T, et al.
出版: (1993)

Beyond the Shockley-Queisser limit : intermediate band and tandem solar cells leveraging silicon and CdTe technology
由: Mailoa, Jonathan P
出版: (2016)

Influence of non-radiative exciton recombination in silicon on photoconversion efficiency. 2. Short Shockley–Read–Hall lifetimes
由: A.V. Sachenko, et al.
出版: (2017-04-01)

Generation of dislocation glide loops in Czochralski silicon
由: Giannattasio, A, et al.
出版: (2002)

Dislocation locking by nitrogen impurities in FZ-silicon
由: Giannattasio, A, et al.
出版: (2003)

Generalized stacking fault energy surface mismatch and dislocation transformation
由: Longsheng Feng, et al.
出版: (2021-12-01)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
由: Senkader, S, et al.
出版: (2001)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
由: Fell, T, et al.
出版: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
由: Fell, T, et al.
出版: (1991)

Resolving the Corbino Shockley-Ramo paradox for hydrodynamic current noise
由: Aaron Hui
出版: (2024-12-01)

Solute atom segregation to I1 stacking fault and its bounding partial dislocations in a Mg–Bi alloy
由: Cong He, et al.
出版: (2024-08-01)

Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
由: Murphy, J, et al.
出版: (2012)

Stacking-fault imaging using transmission ion channeling.
由: King, P, et al.
出版: (1995)

APPLICATION OF TRANSMISSION ION CHANNELING TO THE IMAGING OF STACKING-FAULTS
由: King, P, et al.
出版: (1995)

Are Shockley-Read-Hall and ABC models valid for lead halide perovskites?
由: Alexander Kiligaridis, et al.
出版: (2021-06-01)