Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures

Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures

Manylion Llyfryddiaeth
Prif Awduron:	Joyce, H, Gao, Q, Kim, Y, Tan, H, Jagadish, C
Fformat:	Conference item
Cyhoeddwyd:	2007

Eitemau Tebyg

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
gan: Joyce, H, et al.
Cyhoeddwyd: (2011)

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
gan: Joyce, H, et al.
Cyhoeddwyd: (2011)

High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
gan: Jiang, N, et al.
Cyhoeddwyd: (2013)

Modeling of the growth of GaAs–AlGaAs core–shell nanowires
gan: Qian Zhang, et al.
Cyhoeddwyd: (2017-02-01)

Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
gan: Smith, L, et al.
Cyhoeddwyd: (2007)

Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
gan: Kang, J, et al.
Cyhoeddwyd: (2011)

Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires
gan: Titova, L, et al.
Cyhoeddwyd: (2006)

Improved GaAs nanowire solar cells using AlGaAs for surface passivation
gan: Lee, Y, et al.
Cyhoeddwyd: (2012)

Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.
gan: Jiang, N, et al.
Cyhoeddwyd: (2013)

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires.
gan: Hoang, T, et al.
Cyhoeddwyd: (2007)

Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
gan: Perera, S, et al.
Cyhoeddwyd: (2008)

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
gan: Yao Wu, et al.
Cyhoeddwyd: (2018-04-01)

Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires.
gan: Kim, Y, et al.
Cyhoeddwyd: (2006)

A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
gan: Ming Rong Lee, et al.
Cyhoeddwyd: (2001-01-01)

Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
gan: Li, Chaoyong.
Cyhoeddwyd: (2009)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
gan: Paladugu, M, et al.
Cyhoeddwyd: (2008)

Growth mechanism of truncated triangular GaAs nanowires
gan: Zou, J, et al.
Cyhoeddwyd: (2006)

Purcell Effect and Beaming of Emission in Hybrid AlGaAs Nanowires with GaAs Quantum Dots
gan: Rodion R. Reznik, et al.
Cyhoeddwyd: (2021-10-01)

Growth of straight InAs-on-GaAs nanowire heterostructures
gan: Messing, M, et al.
Cyhoeddwyd: (2011)

Self-healing of fractured GaAs nanowires.
gan: Wang, Y, et al.
Cyhoeddwyd: (2011)

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates
gan: Nikolay Baidus, et al.
Cyhoeddwyd: (2018-07-01)

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires
gan: Boland, J, et al.
Cyhoeddwyd: (2017)

Observation of enhanced spontaneous and stimulated emission of GaAs/AlGaAs nanowire via the Purcell effect
gan: Wei Wei, et al.
Cyhoeddwyd: (2015-08-01)

Optically pumped room-temperature GaAs nanowire lasers
gan: Saxena, D, et al.
Cyhoeddwyd: (2013)

Transient terahertz conductivity of GaAs nanowires
gan: Parkinson, P, et al.
Cyhoeddwyd: (2007)

Modulation doping of GaAs/AlGaAs core-shell nanowires with effective defect passivation and high electron mobility
gan: Boland, J, et al.
Cyhoeddwyd: (2015)

Super deformability and Young's modulus of GaAs nanowires.
gan: Wang, Y, et al.
Cyhoeddwyd: (2011)

Study of quantum phenomena in intermixed GaAs/AlGaAs and InGaAs/InGaAsP quantum well structures
gan: Au Yeung, Tin Cheung.
Cyhoeddwyd: (2008)

Understanding the true shape of Au-catalyzed GaAs nanowires.
gan: Jiang, N, et al.
Cyhoeddwyd: (2014)

Optoelectronic properties of GaAs nanowire photodetector
gan: Wang, H, et al.
Cyhoeddwyd: (2012)

Model of a GaAs Quantum Dot in a Direct Band Gap AlGaAs Wurtzite Nanowire
gan: Daniele Barettin, et al.
Cyhoeddwyd: (2023-05-01)

Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics
gan: Joyce, H, et al.
Cyhoeddwyd: (2008)

Optical properties of single InP and GaAs nanowire heterostructures
gan: Jackson, H, et al.
Cyhoeddwyd: (2008)

Novel growth and properties of GaAs nanowires on Si substrates.
gan: Kang, J, et al.
Cyhoeddwyd: (2010)

Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition
gan: Joyce, H, et al.
Cyhoeddwyd: (2006)

Nanoscale spectroscopic imaging of GaAs-AlGaAs quantum well tube nanowires: correlating luminescence with nanowire size and inner multishell structure
gan: Prete Paola, et al.
Cyhoeddwyd: (2019-08-01)

Understanding the kink formation in GaAs/InAs heterostructural nanowires
gan: Paladugu, M, et al.
Cyhoeddwyd: (2006)

Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
gan: Zhao, Q, et al.
Cyhoeddwyd: (2000)

Vertically standing Ge nanowires on GaAs(110) substrates
gan: Song, MS, et al.
Cyhoeddwyd: (2008)

Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures.
gan: Paladugu, M, et al.
Cyhoeddwyd: (2009)