Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)
A series of diorganotin complexes of dithiocarbamates [Sn(C 4H9)2(S2CN(RR′) 2)2] (R, R′ = ethyl (1); R = methyl, R′ = butyl (2); R, R′ = butyl (3); R = methyl, R′ = hexyl (4); and [Sn(C6H5)2(S2CN(RR′) 2)2] (R, R′ = ethyl (5); R = methyl, R′ = butyl (6); R, R′ = butyl (7); R = methyl, R′ = hexyl (8)...
| Հիմնական հեղինակներ: | , , , , , , |
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| Ձևաչափ: | Journal article |
| Լեզու: | English |
| Հրապարակվել է: |
2013
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| _version_ | 1826286122833018880 |
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| author | Ramasamy, K Kuznetsov, V Gopal, K Malik, M Raftery, J Edwards, P O'Brien, P |
| author_facet | Ramasamy, K Kuznetsov, V Gopal, K Malik, M Raftery, J Edwards, P O'Brien, P |
| author_sort | Ramasamy, K |
| collection | OXFORD |
| description | A series of diorganotin complexes of dithiocarbamates [Sn(C 4H9)2(S2CN(RR′) 2)2] (R, R′ = ethyl (1); R = methyl, R′ = butyl (2); R, R′ = butyl (3); R = methyl, R′ = hexyl (4); and [Sn(C6H5)2(S2CN(RR′) 2)2] (R, R′ = ethyl (5); R = methyl, R′ = butyl (6); R, R′ = butyl (7); R = methyl, R′ = hexyl (8) were synthesized. Single-crystal X-ray structures of 2, 3, and 8 were determined. Thermogravimetric analysis (TGA) showed single-step decomposition for the complexes 1, 3, and 5-8, and double-step decomposition for the complexes 2 and 4 between 195 C and 325 C. Complexes 1-4 were used as single-source precursors for the deposition of SnS thin films by aerosol-assisted chemical vapor deposition (AACVD) at temperatures from 400 C to 530 C. Orthorhombic SnS thin films were deposited from all four complexes at all deposition temperatures. The films were characterized by UV-vis spectroscopy, powder X-ray diffraction (p-XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and also electrical resistivity measurements. © Published 2013 by the American Chemical Society. |
| first_indexed | 2024-03-07T01:39:05Z |
| format | Journal article |
| id | oxford-uuid:9636fcfd-ab3e-4cf9-b7fa-00f94cb92d6c |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T01:39:05Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | oxford-uuid:9636fcfd-ab3e-4cf9-b7fa-00f94cb92d6c2022-03-26T23:51:32ZOrganotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:9636fcfd-ab3e-4cf9-b7fa-00f94cb92d6cEnglishSymplectic Elements at Oxford2013Ramasamy, KKuznetsov, VGopal, KMalik, MRaftery, JEdwards, PO'Brien, PA series of diorganotin complexes of dithiocarbamates [Sn(C 4H9)2(S2CN(RR′) 2)2] (R, R′ = ethyl (1); R = methyl, R′ = butyl (2); R, R′ = butyl (3); R = methyl, R′ = hexyl (4); and [Sn(C6H5)2(S2CN(RR′) 2)2] (R, R′ = ethyl (5); R = methyl, R′ = butyl (6); R, R′ = butyl (7); R = methyl, R′ = hexyl (8) were synthesized. Single-crystal X-ray structures of 2, 3, and 8 were determined. Thermogravimetric analysis (TGA) showed single-step decomposition for the complexes 1, 3, and 5-8, and double-step decomposition for the complexes 2 and 4 between 195 C and 325 C. Complexes 1-4 were used as single-source precursors for the deposition of SnS thin films by aerosol-assisted chemical vapor deposition (AACVD) at temperatures from 400 C to 530 C. Orthorhombic SnS thin films were deposited from all four complexes at all deposition temperatures. The films were characterized by UV-vis spectroscopy, powder X-ray diffraction (p-XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and also electrical resistivity measurements. © Published 2013 by the American Chemical Society. |
| spellingShingle | Ramasamy, K Kuznetsov, V Gopal, K Malik, M Raftery, J Edwards, P O'Brien, P Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD) |
| title | Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD) |
| title_full | Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD) |
| title_fullStr | Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD) |
| title_full_unstemmed | Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD) |
| title_short | Organotin Dithiocarbamates: Single-Source Precursors for Tin Sulfide Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD) |
| title_sort | organotin dithiocarbamates single source precursors for tin sulfide thin films by aerosol assisted chemical vapor deposition aacvd |
| work_keys_str_mv | AT ramasamyk organotindithiocarbamatessinglesourceprecursorsfortinsulfidethinfilmsbyaerosolassistedchemicalvapordepositionaacvd AT kuznetsovv organotindithiocarbamatessinglesourceprecursorsfortinsulfidethinfilmsbyaerosolassistedchemicalvapordepositionaacvd AT gopalk organotindithiocarbamatessinglesourceprecursorsfortinsulfidethinfilmsbyaerosolassistedchemicalvapordepositionaacvd AT malikm organotindithiocarbamatessinglesourceprecursorsfortinsulfidethinfilmsbyaerosolassistedchemicalvapordepositionaacvd AT rafteryj organotindithiocarbamatessinglesourceprecursorsfortinsulfidethinfilmsbyaerosolassistedchemicalvapordepositionaacvd AT edwardsp organotindithiocarbamatessinglesourceprecursorsfortinsulfidethinfilmsbyaerosolassistedchemicalvapordepositionaacvd AT obrienp organotindithiocarbamatessinglesourceprecursorsfortinsulfidethinfilmsbyaerosolassistedchemicalvapordepositionaacvd |