Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
Main Authors: | Fu, Y, Willander, M, Lu, W, Liu, X, Shen, S, Jagadish, C, Gal, M, Zou, J, Cockayne, D |
---|---|
Format: | Journal article |
Published: |
2000
|
Similar Items
-
Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
by: Fu, Y, et al.
Published: (2001) -
Magneto-luminescence of quasi-zero dimensional In0.25Ga0.75As/GaAs quantum dots
by: Cheng, H, et al.
Published: (1998) -
Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006) -
Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006) -
MISFIT DISLOCATIONS LYING ALONG (100) IN [001] GAAS/IN0.25GA0.75AS/GAAS QUANTUM-WELL HETEROSTRUCTURES
by: Zou, J, et al.
Published: (1994)