Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds

We report on the MoS2 and MoOx (x = 2 and 3) composite thin layers, electrodeposited, onto a Florine doped Tin Oxide (FTO) substrate. Our results show a change in relative content of these compounds in different thicknesses ranging from ∼20 to 540 nm. This change in the relative content at different...

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Main Authors: Erfanifam, S, Mohseni, SM, Jamilpanah, L, Mohammadbeigi, M, Sangpour, P, Hosseini, SA, Zad, AI
Format: Journal article
Published: Elsevier 2017
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author Erfanifam, S
Mohseni, SM
Jamilpanah, L
Mohammadbeigi, M
Sangpour, P
Hosseini, SA
Zad, AI
author_facet Erfanifam, S
Mohseni, SM
Jamilpanah, L
Mohammadbeigi, M
Sangpour, P
Hosseini, SA
Zad, AI
author_sort Erfanifam, S
collection OXFORD
description We report on the MoS2 and MoOx (x = 2 and 3) composite thin layers, electrodeposited, onto a Florine doped Tin Oxide (FTO) substrate. Our results show a change in relative content of these compounds in different thicknesses ranging from ∼20 to 540 nm. This change in the relative content at different thicknesses leads to a change in optical and electrical properties including bandgap and the type of semiconductivity. A sharp transition from p to n-type of semiconductivity is observed by scanning tunneling spectroscopy measurements. We find that the spin-orbit interaction of Mo 3d electrons in the MoS2 and MoO3 enhances by significant reduction of the MoO3 content in thicker layers.
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spelling oxford-uuid:977bb542-754f-4462-9d69-3b0b77bd4f5d2022-03-26T23:59:57ZTunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compoundsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:977bb542-754f-4462-9d69-3b0b77bd4f5dSymplectic Elements at OxfordElsevier2017Erfanifam, SMohseni, SMJamilpanah, LMohammadbeigi, MSangpour, PHosseini, SAZad, AIWe report on the MoS2 and MoOx (x = 2 and 3) composite thin layers, electrodeposited, onto a Florine doped Tin Oxide (FTO) substrate. Our results show a change in relative content of these compounds in different thicknesses ranging from ∼20 to 540 nm. This change in the relative content at different thicknesses leads to a change in optical and electrical properties including bandgap and the type of semiconductivity. A sharp transition from p to n-type of semiconductivity is observed by scanning tunneling spectroscopy measurements. We find that the spin-orbit interaction of Mo 3d electrons in the MoS2 and MoO3 enhances by significant reduction of the MoO3 content in thicker layers.
spellingShingle Erfanifam, S
Mohseni, SM
Jamilpanah, L
Mohammadbeigi, M
Sangpour, P
Hosseini, SA
Zad, AI
Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds
title Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds
title_full Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds
title_fullStr Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds
title_full_unstemmed Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds
title_short Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds
title_sort tunable bandgap and spin orbit coupling by composition control of mos2 and moox x 2 and 3 thin film compounds
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