Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds
We report on the MoS2 and MoOx (x = 2 and 3) composite thin layers, electrodeposited, onto a Florine doped Tin Oxide (FTO) substrate. Our results show a change in relative content of these compounds in different thicknesses ranging from ∼20 to 540 nm. This change in the relative content at different...
Main Authors: | , , , , , , |
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Format: | Journal article |
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Elsevier
2017
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_version_ | 1797083539895746560 |
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author | Erfanifam, S Mohseni, SM Jamilpanah, L Mohammadbeigi, M Sangpour, P Hosseini, SA Zad, AI |
author_facet | Erfanifam, S Mohseni, SM Jamilpanah, L Mohammadbeigi, M Sangpour, P Hosseini, SA Zad, AI |
author_sort | Erfanifam, S |
collection | OXFORD |
description | We report on the MoS2 and MoOx (x = 2 and 3) composite thin layers, electrodeposited, onto a Florine doped Tin Oxide (FTO) substrate. Our results show a change in relative content of these compounds in different thicknesses ranging from ∼20 to 540 nm. This change in the relative content at different thicknesses leads to a change in optical and electrical properties including bandgap and the type of semiconductivity. A sharp transition from p to n-type of semiconductivity is observed by scanning tunneling spectroscopy measurements. We find that the spin-orbit interaction of Mo 3d electrons in the MoS2 and MoO3 enhances by significant reduction of the MoO3 content in thicker layers. |
first_indexed | 2024-03-07T01:42:58Z |
format | Journal article |
id | oxford-uuid:977bb542-754f-4462-9d69-3b0b77bd4f5d |
institution | University of Oxford |
last_indexed | 2024-03-07T01:42:58Z |
publishDate | 2017 |
publisher | Elsevier |
record_format | dspace |
spelling | oxford-uuid:977bb542-754f-4462-9d69-3b0b77bd4f5d2022-03-26T23:59:57ZTunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compoundsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:977bb542-754f-4462-9d69-3b0b77bd4f5dSymplectic Elements at OxfordElsevier2017Erfanifam, SMohseni, SMJamilpanah, LMohammadbeigi, MSangpour, PHosseini, SAZad, AIWe report on the MoS2 and MoOx (x = 2 and 3) composite thin layers, electrodeposited, onto a Florine doped Tin Oxide (FTO) substrate. Our results show a change in relative content of these compounds in different thicknesses ranging from ∼20 to 540 nm. This change in the relative content at different thicknesses leads to a change in optical and electrical properties including bandgap and the type of semiconductivity. A sharp transition from p to n-type of semiconductivity is observed by scanning tunneling spectroscopy measurements. We find that the spin-orbit interaction of Mo 3d electrons in the MoS2 and MoO3 enhances by significant reduction of the MoO3 content in thicker layers. |
spellingShingle | Erfanifam, S Mohseni, SM Jamilpanah, L Mohammadbeigi, M Sangpour, P Hosseini, SA Zad, AI Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds |
title | Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds |
title_full | Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds |
title_fullStr | Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds |
title_full_unstemmed | Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds |
title_short | Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x=2 and 3) thin film compounds |
title_sort | tunable bandgap and spin orbit coupling by composition control of mos2 and moox x 2 and 3 thin film compounds |
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