Dislocation locking in silicon by oxygen and oxygen transport at low temperatures

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures

Dislocation-oxygen interactions in silicon have been studied experimentally and using numerical modelling. Experiments were performed to understand the locking of dislocations by oxygen and to measure the unlocking stress of dislocations in the temperature range 350-900degreesC for different anneali...

Descripció completa

Dades bibliogràfiques
Autors principals:	Senkader, S, Giannattasio, A, Falster, R, Wilshaw, P
Format:	Conference item
Publicat:	Trans Tech Publications Ltd 2004

Ítems similars

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
per: Senkader, S, et al.
Publicat: (2002)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
per: Giannattasio, A, et al.
Publicat: (2005)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
per: Senkader, S, et al.
Publicat: (2001)

Locking of dislocations by oxygen in Cz-silicon
per: Senkader, S, et al.
Publicat: (1999)

On the locking of dislocations by oxygen in silicon
per: Senkader, S, et al.
Publicat: (2001)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
per: Murphy, J, et al.
Publicat: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
per: Murphy, J, et al.
Publicat: (2006)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005)
per: Giannattasio, A, et al.
Publicat: (2005)

On the dislocation-oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures
per: Senkader, S, et al.
Publicat: (2002)

Dislocation locking by nitrogen impurities in FZ-silicon
per: Giannattasio, A, et al.
Publicat: (2003)

Impurity locking of dislocations in silicon
per: Giannattasio, A, et al.
Publicat: (2004)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
per: Murphy, J, et al.
Publicat: (2005)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
per: Murphy, J, et al.
Publicat: (2005)

The segregation behaviour of oxygen at dislocations in silicon
per: Senkader, S, et al.
Publicat: (1999)

The influence of nitrogen on dislocation locking in float-zone silicon
per: Murphy, J, et al.
Publicat: (2005)

The influence of nitrogen on dislocation locking in float-zone silicon
per: Murphy, J, et al.
Publicat: (2005)

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
per: Giannattasio, A, et al.
Publicat: (2004)

Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
per: Alpass, C, et al.
Publicat: (2007)

Generation of dislocation glide loops in Czochralski silicon
per: Giannattasio, A, et al.
Publicat: (2002)

A study of oxygen dislocation interactions in CZ-Si
per: Senkader, S, et al.
Publicat: (2000)

The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers
per: Giannattasio, A, et al.
Publicat: (2003)

A room temperature cathodoluminescence study of dislocations in silicon
per: Stowe, D, et al.
Publicat: (2004)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
per: Murphy, J, et al.
Publicat: (2006)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
per: Murphy, J, et al.
Publicat: (2006)

Nitrogen in silicon: Transport and mechanical properties
per: Murphy, J, et al.
Publicat: (2006)

Nitrogen in silicon: Transport and mechanical properties
per: Murphy, J, et al.
Publicat: (2006)

Near-band gap luminescence at room temperature from dislocations in silicon
per: Stowe, D, et al.
Publicat: (2003)

The role of dislocations in producing efficient near-bandgap luminescence from silicon
per: Fraser, K, et al.
Publicat: (2007)

Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals
per: Giannattasio, A
Publicat: (2004)

Nitrogen-doped silicon: Mechanical, transport and electrical properties
per: Murphy, J, et al.
Publicat: (2006)

The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon
per: Zeng, Z, et al.
Publicat: (2011)

Nitrogen diffusion and interaction with dislocations in single-crystal silicon
per: Alpass, C, et al.
Publicat: (2009)

Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon
per: Stowe, D, et al.
Publicat: (2005)

Onset of slip in silicon containing oxide precipitates
per: Jurkschat, K, et al.
Publicat: (2001)

Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
per: Alpass, C, et al.
Publicat: (2009)

Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations
per: Alpass, C, et al.
Publicat: (2009)

Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
per: Alpass, C, et al.
Publicat: (2009)

Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
per: Alpass, C, et al.
Publicat: (2008)

Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon
per: Fraser, K, et al.
Publicat: (2008)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
per: Ourmazd, A, et al.
Publicat: (1983)