Dislocation locking in silicon by oxygen and oxygen transport at low temperatures

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures

Dislocation-oxygen interactions in silicon have been studied experimentally and using numerical modelling. Experiments were performed to understand the locking of dislocations by oxygen and to measure the unlocking stress of dislocations in the temperature range 350-900degreesC for different anneali...

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Bibliografiske detaljer
Main Authors:	Senkader, S, Giannattasio, A, Falster, R, Wilshaw, P
Format:	Conference item
Udgivet:	Trans Tech Publications Ltd 2004

Lignende værker

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
af: Senkader, S, et al.
Udgivet: (2002)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
af: Giannattasio, A, et al.
Udgivet: (2005)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
af: Senkader, S, et al.
Udgivet: (2001)

Locking of dislocations by oxygen in Cz-silicon
af: Senkader, S, et al.
Udgivet: (1999)

On the locking of dislocations by oxygen in silicon
af: Senkader, S, et al.
Udgivet: (2001)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
af: Murphy, J, et al.
Udgivet: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
af: Murphy, J, et al.
Udgivet: (2006)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005)
af: Giannattasio, A, et al.
Udgivet: (2005)

On the dislocation-oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures
af: Senkader, S, et al.
Udgivet: (2002)

Dislocation locking by nitrogen impurities in FZ-silicon
af: Giannattasio, A, et al.
Udgivet: (2003)

Impurity locking of dislocations in silicon
af: Giannattasio, A, et al.
Udgivet: (2004)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
af: Murphy, J, et al.
Udgivet: (2005)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
af: Murphy, J, et al.
Udgivet: (2005)

The segregation behaviour of oxygen at dislocations in silicon
af: Senkader, S, et al.
Udgivet: (1999)

The influence of nitrogen on dislocation locking in float-zone silicon
af: Murphy, J, et al.
Udgivet: (2005)

The influence of nitrogen on dislocation locking in float-zone silicon
af: Murphy, J, et al.
Udgivet: (2005)

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
af: Giannattasio, A, et al.
Udgivet: (2004)

Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
af: Alpass, C, et al.
Udgivet: (2007)

Generation of dislocation glide loops in Czochralski silicon
af: Giannattasio, A, et al.
Udgivet: (2002)

A study of oxygen dislocation interactions in CZ-Si
af: Senkader, S, et al.
Udgivet: (2000)

The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers
af: Giannattasio, A, et al.
Udgivet: (2003)

A room temperature cathodoluminescence study of dislocations in silicon
af: Stowe, D, et al.
Udgivet: (2004)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
af: Murphy, J, et al.
Udgivet: (2006)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
af: Murphy, J, et al.
Udgivet: (2006)

Nitrogen in silicon: Transport and mechanical properties
af: Murphy, J, et al.
Udgivet: (2006)

Nitrogen in silicon: Transport and mechanical properties
af: Murphy, J, et al.
Udgivet: (2006)

Near-band gap luminescence at room temperature from dislocations in silicon
af: Stowe, D, et al.
Udgivet: (2003)

The role of dislocations in producing efficient near-bandgap luminescence from silicon
af: Fraser, K, et al.
Udgivet: (2007)

Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals
af: Giannattasio, A
Udgivet: (2004)

Nitrogen-doped silicon: Mechanical, transport and electrical properties
af: Murphy, J, et al.
Udgivet: (2006)

The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon
af: Zeng, Z, et al.
Udgivet: (2011)

Nitrogen diffusion and interaction with dislocations in single-crystal silicon
af: Alpass, C, et al.
Udgivet: (2009)

Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon
af: Stowe, D, et al.
Udgivet: (2005)

Onset of slip in silicon containing oxide precipitates
af: Jurkschat, K, et al.
Udgivet: (2001)

Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
af: Alpass, C, et al.
Udgivet: (2009)

Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations
af: Alpass, C, et al.
Udgivet: (2009)

Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
af: Alpass, C, et al.
Udgivet: (2009)

Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
af: Alpass, C, et al.
Udgivet: (2008)

Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon
af: Fraser, K, et al.
Udgivet: (2008)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
af: Ourmazd, A, et al.
Udgivet: (1983)