Dislocation locking in silicon by oxygen and oxygen transport at low temperatures

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures

Dislocation-oxygen interactions in silicon have been studied experimentally and using numerical modelling. Experiments were performed to understand the locking of dislocations by oxygen and to measure the unlocking stress of dislocations in the temperature range 350-900degreesC for different anneali...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид:	Senkader, S, Giannattasio, A, Falster, R, Wilshaw, P
Формат:	Conference item
Хэвлэсэн:	Trans Tech Publications Ltd 2004

Ижил төстэй зүйлс

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
-н: Senkader, S, зэрэг
Хэвлэсэн: (2002)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
-н: Giannattasio, A, зэрэг
Хэвлэсэн: (2005)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
-н: Senkader, S, зэрэг
Хэвлэсэн: (2001)

Locking of dislocations by oxygen in Cz-silicon
-н: Senkader, S, зэрэг
Хэвлэсэн: (1999)

On the locking of dislocations by oxygen in silicon
-н: Senkader, S, зэрэг
Хэвлэсэн: (2001)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
-н: Murphy, J, зэрэг
Хэвлэсэн: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
-н: Murphy, J, зэрэг
Хэвлэсэн: (2006)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments (vol 152, pg G460, 2005)
-н: Giannattasio, A, зэрэг
Хэвлэсэн: (2005)

On the dislocation-oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures
-н: Senkader, S, зэрэг
Хэвлэсэн: (2002)

Dislocation locking by nitrogen impurities in FZ-silicon
-н: Giannattasio, A, зэрэг
Хэвлэсэн: (2003)

Impurity locking of dislocations in silicon
-н: Giannattasio, A, зэрэг
Хэвлэсэн: (2004)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
-н: Murphy, J, зэрэг
Хэвлэсэн: (2005)

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments
-н: Murphy, J, зэрэг
Хэвлэсэн: (2005)

The segregation behaviour of oxygen at dislocations in silicon
-н: Senkader, S, зэрэг
Хэвлэсэн: (1999)

The influence of nitrogen on dislocation locking in float-zone silicon
-н: Murphy, J, зэрэг
Хэвлэсэн: (2005)

The influence of nitrogen on dislocation locking in float-zone silicon
-н: Murphy, J, зэрэг
Хэвлэсэн: (2005)

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
-н: Giannattasio, A, зэрэг
Хэвлэсэн: (2004)

Out-diffusion of nitrogen from float-zone silicon measured by dislocation locking
-н: Alpass, C, зэрэг
Хэвлэсэн: (2007)

Generation of dislocation glide loops in Czochralski silicon
-н: Giannattasio, A, зэрэг
Хэвлэсэн: (2002)

A study of oxygen dislocation interactions in CZ-Si
-н: Senkader, S, зэрэг
Хэвлэсэн: (2000)

The use of numerical simulation to predict the unlocking stress of dislocations in Cz-silicon wafers
-н: Giannattasio, A, зэрэг
Хэвлэсэн: (2003)

A room temperature cathodoluminescence study of dislocations in silicon
-н: Stowe, D, зэрэг
Хэвлэсэн: (2004)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
-н: Murphy, J, зэрэг
Хэвлэсэн: (2006)

Enhanced oxygen diffusion in highly doped p-type Czochralski silicon
-н: Murphy, J, зэрэг
Хэвлэсэн: (2006)

Nitrogen in silicon: Transport and mechanical properties
-н: Murphy, J, зэрэг
Хэвлэсэн: (2006)

Nitrogen in silicon: Transport and mechanical properties
-н: Murphy, J, зэрэг
Хэвлэсэн: (2006)

Near-band gap luminescence at room temperature from dislocations in silicon
-н: Stowe, D, зэрэг
Хэвлэсэн: (2003)

The role of dislocations in producing efficient near-bandgap luminescence from silicon
-н: Fraser, K, зэрэг
Хэвлэсэн: (2007)

Interaction of oxygen and nitrogen impurities with dislocations in silicon single-crystals
-н: Giannattasio, A
Хэвлэсэн: (2004)

Nitrogen-doped silicon: Mechanical, transport and electrical properties
-н: Murphy, J, зэрэг
Хэвлэсэн: (2006)

The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon
-н: Zeng, Z, зэрэг
Хэвлэсэн: (2011)

Nitrogen diffusion and interaction with dislocations in single-crystal silicon
-н: Alpass, C, зэрэг
Хэвлэсэн: (2009)

Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon
-н: Stowe, D, зэрэг
Хэвлэсэн: (2005)

Onset of slip in silicon containing oxide precipitates
-н: Jurkschat, K, зэрэг
Хэвлэсэн: (2001)

Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
-н: Alpass, C, зэрэг
Хэвлэсэн: (2009)

Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations
-н: Alpass, C, зэрэг
Хэвлэсэн: (2009)

Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
-н: Alpass, C, зэрэг
Хэвлэсэн: (2009)

Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
-н: Alpass, C, зэрэг
Хэвлэсэн: (2008)

Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon
-н: Fraser, K, зэрэг
Хэвлэсэн: (2008)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
-н: Ourmazd, A, зэрэг
Хэвлэсэн: (1983)