Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
Dislocation-oxygen interactions in silicon have been studied experimentally and using numerical modelling. Experiments were performed to understand the locking of dislocations by oxygen and to measure the unlocking stress of dislocations in the temperature range 350-900degreesC for different anneali...
| Автори: | , , , |
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| Формат: | Conference item |
| Опубліковано: |
Trans Tech Publications Ltd
2004
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