Broadband semiconductor terahertz laser based on heterogeneous cascades
We present a development of a broad gain heterogeneous quantum cascade laser for terahertz frequencies. By placing appropriate different active-regions based on a four-quantum-well design into a double-metal waveguide we obtained laser emitting gapless over a bandwidth of 1 THz, between 3.2 to 2.2 T...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2011
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| _version_ | 1826286462525505536 |
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| author | Turčinková, D Scalari, G Amanti, M Castellano, F Beck, M Lloyd-Hughes, J Faist, J |
| author_facet | Turčinková, D Scalari, G Amanti, M Castellano, F Beck, M Lloyd-Hughes, J Faist, J |
| author_sort | Turčinková, D |
| collection | OXFORD |
| description | We present a development of a broad gain heterogeneous quantum cascade laser for terahertz frequencies. By placing appropriate different active-regions based on a four-quantum-well design into a double-metal waveguide we obtained laser emitting gapless over a bandwidth of 1 THz, between 3.2 to 2.2 THz. This means that this single-device source covers an emission range of nearly 40 % around the center frequency. In pulsed mode operation, our devices show threshold current density as low as 285 A/cm2 and they operate up to 125 K. We also report on continuous wave measurements. © 2011 SPIE. |
| first_indexed | 2024-03-07T01:44:08Z |
| format | Journal article |
| id | oxford-uuid:97d756b9-eae7-493d-aa84-b4f88b586ed7 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T01:44:08Z |
| publishDate | 2011 |
| record_format | dspace |
| spelling | oxford-uuid:97d756b9-eae7-493d-aa84-b4f88b586ed72022-03-27T00:02:50ZBroadband semiconductor terahertz laser based on heterogeneous cascadesJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:97d756b9-eae7-493d-aa84-b4f88b586ed7EnglishSymplectic Elements at Oxford2011Turčinková, DScalari, GAmanti, MCastellano, FBeck, MLloyd-Hughes, JFaist, JWe present a development of a broad gain heterogeneous quantum cascade laser for terahertz frequencies. By placing appropriate different active-regions based on a four-quantum-well design into a double-metal waveguide we obtained laser emitting gapless over a bandwidth of 1 THz, between 3.2 to 2.2 THz. This means that this single-device source covers an emission range of nearly 40 % around the center frequency. In pulsed mode operation, our devices show threshold current density as low as 285 A/cm2 and they operate up to 125 K. We also report on continuous wave measurements. © 2011 SPIE. |
| spellingShingle | Turčinková, D Scalari, G Amanti, M Castellano, F Beck, M Lloyd-Hughes, J Faist, J Broadband semiconductor terahertz laser based on heterogeneous cascades |
| title | Broadband semiconductor terahertz laser based on heterogeneous cascades |
| title_full | Broadband semiconductor terahertz laser based on heterogeneous cascades |
| title_fullStr | Broadband semiconductor terahertz laser based on heterogeneous cascades |
| title_full_unstemmed | Broadband semiconductor terahertz laser based on heterogeneous cascades |
| title_short | Broadband semiconductor terahertz laser based on heterogeneous cascades |
| title_sort | broadband semiconductor terahertz laser based on heterogeneous cascades |
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