Mid-infrared luminescence from coupled quantum dots and wells
Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 mum. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which t...
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| Format: | Conference item |
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2004
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| _version_ | 1826286474417405952 |
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| author | Shields, P Li, L Nicholas, R |
| author_facet | Shields, P Li, L Nicholas, R |
| author_sort | Shields, P |
| collection | OXFORD |
| description | Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 mum. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. The overall transition energy of the combined dot-well system is generally reduced with respect to the dots and well only but the dependence on spacer thickness is more complex than that expected from a simple envelope function model. (C) 2003 Elsevier B.V. All rights reserved. |
| first_indexed | 2024-03-07T01:44:18Z |
| format | Conference item |
| id | oxford-uuid:97e69096-b02d-42c8-bf89-58a9eb8a71dd |
| institution | University of Oxford |
| last_indexed | 2024-03-07T01:44:18Z |
| publishDate | 2004 |
| record_format | dspace |
| spelling | oxford-uuid:97e69096-b02d-42c8-bf89-58a9eb8a71dd2022-03-27T00:03:10ZMid-infrared luminescence from coupled quantum dots and wellsConference itemhttp://purl.org/coar/resource_type/c_5794uuid:97e69096-b02d-42c8-bf89-58a9eb8a71ddSymplectic Elements at Oxford2004Shields, PLi, LNicholas, RCoupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 mum. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. The overall transition energy of the combined dot-well system is generally reduced with respect to the dots and well only but the dependence on spacer thickness is more complex than that expected from a simple envelope function model. (C) 2003 Elsevier B.V. All rights reserved. |
| spellingShingle | Shields, P Li, L Nicholas, R Mid-infrared luminescence from coupled quantum dots and wells |
| title | Mid-infrared luminescence from coupled quantum dots and wells |
| title_full | Mid-infrared luminescence from coupled quantum dots and wells |
| title_fullStr | Mid-infrared luminescence from coupled quantum dots and wells |
| title_full_unstemmed | Mid-infrared luminescence from coupled quantum dots and wells |
| title_short | Mid-infrared luminescence from coupled quantum dots and wells |
| title_sort | mid infrared luminescence from coupled quantum dots and wells |
| work_keys_str_mv | AT shieldsp midinfraredluminescencefromcoupledquantumdotsandwells AT lil midinfraredluminescencefromcoupledquantumdotsandwells AT nicholasr midinfraredluminescencefromcoupledquantumdotsandwells |