Contamination of silicon by iron at temperatures below 800 degrees C

Contamination of silicon by iron at temperatures below 800 degrees C

Iron-related defects are deleterious in silicon-based integrated circuits and photovoltaics, ruining devices and acting as strong recombination centres. Unless great care is taken, iron contamination will result from high temperature processing and so it is essential to understand the degree to whic...

書誌詳細
主要な著者:	Murphy, J, Falster, R
フォーマット:	Journal article
言語:	English
出版事項:	2011

類似資料

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
著者:: Senkader, S, 等
出版事項: (2001)

The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750 degrees C
著者:: Murphy, J, 等
出版事項: (2012)

Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations
著者:: Alpass, C, 等
出版事項: (2009)

K+-nucleon amplitudes in the medium below 800 MeV/c
著者:: Friedman E.
出版事項: (2016-01-01)

Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates
著者:: Bothe, K, 等
出版事項: (2012)

NEUTRON-IRRADIATION OF SILICON DIODES AT TEMPERATURES OF +20-DEGREES-C AND -20-DEGREES-C
著者:: Anghinolfi, F, 等
出版事項: (1993)

In-situ TEM investigation of dislocation healing and recrystallization in nanoscratched silicon at elevated temperatures up to 800 °C
著者:: Zhen Li, 等
出版事項: (2024-07-01)

GETTERING OF COPPER AND IRON TO EXTENDED SURFACE-DEFECTS IN SILICON
著者:: Decoteau, M, 等
出版事項: (1992)

Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
著者:: Alpass, C, 等
出版事項: (2009)

PRECIPITATION OF IRON IN SILICON - GETTERING TO EXTENDED SURFACE DEFECT SITES
著者:: Decoteau, M, 等
出版事項: (1991)

Degree structures below 0'
著者:: Liu, Jiang
出版事項: (2010)

Creep behaviour of alloy 690 in the temperature range 800–1000 °C
著者:: Kumar Sourabh, 等
出版事項: (2022-03-01)

GETTERING IN SILICON
著者:: Falster, R
出版事項: (1989)

Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon
著者:: Fraser, K, 等
出版事項: (2008)

Effect Of Thermal Treatment Of Trepel At Temperature Range 800-1200˚C
著者:: Reka Arianit A., 等
出版事項: (2019-12-01)

Tensile tests on stainless steels in temperature range 800 to 1200°C
著者:: Arh, B., 等
出版事項: (2008-04-01)

On the mechanism of recombination at oxide precipitates in silicon
著者:: Murphy, J, 等
出版事項: (2013)

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
著者:: Senkader, S, 等
出版事項: (2004)

Impurity locking of dislocations in silicon
著者:: Giannattasio, A, 等
出版事項: (2004)

Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C
著者:: Anya Curran, 等
出版事項: (2021-02-01)

Comparing the Cold-Cranking Performance of Lead-Acid and Lithium Iron Phosphate Batteries at Temperatures below 0 °C
著者:: Sophia Bauknecht, 等
出版事項: (2023-03-01)

Low Temperature Conductivity in n-Type Noncompensated Silicon below Insulator-Metal Transition
著者:: A. L. Danilyuk, 等
出版事項: (2017-01-01)

The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon
著者:: Zeng, Z, 等
出版事項: (2011)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
著者:: Murphy, J, 等
出版事項: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
著者:: Murphy, J, 等
出版事項: (2006)

Nitrogen diffusion and interaction with dislocations in single-crystal silicon
著者:: Alpass, C, 等
出版事項: (2009)

Fatigue life curves of alloy 617 in the temperature range of 800–950 °C
著者:: Injin Sah, 等
出版事項: (2023-02-01)

Spin-dependent recombination in Czochralski silicon containing oxide precipitates
著者:: Lang, V, 等
出版事項: (2012)

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
著者:: Senkader, S, 等
出版事項: (2002)

A room temperature cathodoluminescence study of dislocations in silicon
著者:: Stowe, D, 等
出版事項: (2004)

The effect of time variation on the results of increasing titanomagnetite in iron sand at magnetization temperature (800°C) with Na2SO4 addition as additive
著者:: Maulana Hedi Eka, 等
出版事項: (2018-01-01)

Recombination at oxide precipitates in silicon
著者:: Murphy, J, 等
出版事項: (2011)

Nitrogen in silicon: Transport and mechanical properties
著者:: Murphy, J, 等
出版事項: (2006)

Nitrogen in silicon: Transport and mechanical properties
著者:: Murphy, J, 等
出版事項: (2006)

Kinetics of Oxidation of Binary Ti-Cu Alloys in the 600–800 °C Temperature Range
著者:: Fatemah Alqattan, 等
出版事項: (2025-02-01)

Friction and wear behavior of copper metal matrix composites at temperatures up to 800 °C
著者:: Yelong Xiao, 等
出版事項: (2022-07-01)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
著者:: Giannattasio, A, 等
出版事項: (2005)

DLTS characterization of aluminum gettering of iron contaminants in boron-doped silicon
著者:: Thienprasit, Jeanne A. (Jeanne Athya)
出版事項: (2005)

Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes
著者:: Youssef Hamdaoui, 等
出版事項: (2023-01-01)

High-temperature oxidation behavior of TA15 aerospace titanium alloy at 500 °C and 800 °C
著者:: Wen Zhong, 等
出版事項: (2024-05-01)