Contamination of silicon by iron at temperatures below 800 degrees C

Contamination of silicon by iron at temperatures below 800 degrees C

Iron-related defects are deleterious in silicon-based integrated circuits and photovoltaics, ruining devices and acting as strong recombination centres. Unless great care is taken, iron contamination will result from high temperature processing and so it is essential to understand the degree to whic...

書目詳細資料
Main Authors:	Murphy, J, Falster, R
格式:	Journal article
語言:	English
出版:	2011

相似書籍

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
由: Senkader, S, et al.
出版: (2001)

The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750 degrees C
由: Murphy, J, et al.
出版: (2012)

Nitrogen in silicon: Diffusion at 500-750 degrees C and interaction with dislocations
由: Alpass, C, et al.
出版: (2009)

K+-nucleon amplitudes in the medium below 800 MeV/c
由: Friedman E.
出版: (2016-01-01)

Room temperature sub-bandgap photoluminescence from silicon containing oxide precipitates
由: Bothe, K, et al.
出版: (2012)

NEUTRON-IRRADIATION OF SILICON DIODES AT TEMPERATURES OF +20-DEGREES-C AND -20-DEGREES-C
由: Anghinolfi, F, et al.
出版: (1993)

In-situ TEM investigation of dislocation healing and recrystallization in nanoscratched silicon at elevated temperatures up to 800 °C
由: Zhen Li, et al.
出版: (2024-07-01)

GETTERING OF COPPER AND IRON TO EXTENDED SURFACE-DEFECTS IN SILICON
由: Decoteau, M, et al.
出版: (1992)

Nitrogen in silicon: Diffusion at 500-750 °C and interaction with dislocations
由: Alpass, C, et al.
出版: (2009)

PRECIPITATION OF IRON IN SILICON - GETTERING TO EXTENDED SURFACE DEFECT SITES
由: Decoteau, M, et al.
出版: (1991)

Degree structures below 0'
由: Liu, Jiang
出版: (2010)

Creep behaviour of alloy 690 in the temperature range 800–1000 °C
由: Kumar Sourabh, et al.
出版: (2022-03-01)

GETTERING IN SILICON
由: Falster, R
出版: (1989)

Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon
由: Fraser, K, et al.
出版: (2008)

Effect Of Thermal Treatment Of Trepel At Temperature Range 800-1200˚C
由: Reka Arianit A., et al.
出版: (2019-12-01)

Tensile tests on stainless steels in temperature range 800 to 1200°C
由: Arh, B., et al.
出版: (2008-04-01)

On the mechanism of recombination at oxide precipitates in silicon
由: Murphy, J, et al.
出版: (2013)

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
由: Senkader, S, et al.
出版: (2004)

Impurity locking of dislocations in silicon
由: Giannattasio, A, et al.
出版: (2004)

Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C
由: Anya Curran, et al.
出版: (2021-02-01)

Comparing the Cold-Cranking Performance of Lead-Acid and Lithium Iron Phosphate Batteries at Temperatures below 0 °C
由: Sophia Bauknecht, et al.
出版: (2023-03-01)

Low Temperature Conductivity in n-Type Noncompensated Silicon below Insulator-Metal Transition
由: A. L. Danilyuk, et al.
出版: (2017-01-01)

The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon
由: Zeng, Z, et al.
出版: (2011)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
由: Murphy, J, et al.
出版: (2006)

Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
由: Murphy, J, et al.
出版: (2006)

Nitrogen diffusion and interaction with dislocations in single-crystal silicon
由: Alpass, C, et al.
出版: (2009)

Fatigue life curves of alloy 617 in the temperature range of 800–950 °C
由: Injin Sah, et al.
出版: (2023-02-01)

Spin-dependent recombination in Czochralski silicon containing oxide precipitates
由: Lang, V, et al.
出版: (2012)

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
由: Senkader, S, et al.
出版: (2002)

A room temperature cathodoluminescence study of dislocations in silicon
由: Stowe, D, et al.
出版: (2004)

The effect of time variation on the results of increasing titanomagnetite in iron sand at magnetization temperature (800°C) with Na2SO4 addition as additive
由: Maulana Hedi Eka, et al.
出版: (2018-01-01)

Recombination at oxide precipitates in silicon
由: Murphy, J, et al.
出版: (2011)

Nitrogen in silicon: Transport and mechanical properties
由: Murphy, J, et al.
出版: (2006)

Nitrogen in silicon: Transport and mechanical properties
由: Murphy, J, et al.
出版: (2006)

Kinetics of Oxidation of Binary Ti-Cu Alloys in the 600–800 °C Temperature Range
由: Fatemah Alqattan, et al.
出版: (2025-02-01)

Friction and wear behavior of copper metal matrix composites at temperatures up to 800 °C
由: Yelong Xiao, et al.
出版: (2022-07-01)

Oxygen and nitrogen transport in silicon investigated by dislocation locking experiments
由: Giannattasio, A, et al.
出版: (2005)

DLTS characterization of aluminum gettering of iron contaminants in boron-doped silicon
由: Thienprasit, Jeanne A. (Jeanne Athya)
出版: (2005)

Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes
由: Youssef Hamdaoui, et al.
出版: (2023-01-01)

High-temperature oxidation behavior of TA15 aerospace titanium alloy at 500 °C and 800 °C
由: Wen Zhong, et al.
出版: (2024-05-01)