Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm.
We report what is to our knowledge the first application of high-efficiency InGaAs/InP photon-counting diode detectors in time-resolved photoluminescence measurements at wavelength greater than 1500 nm. When they were cooled to 77 K and used in conjunction with the time-correlated single-photon coun...
| Main Authors: | , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
2001
|
| _version_ | 1797083753010429952 |
|---|---|
| author | Smith, J Hiskett, P Buller, G |
| author_facet | Smith, J Hiskett, P Buller, G |
| author_sort | Smith, J |
| collection | OXFORD |
| description | We report what is to our knowledge the first application of high-efficiency InGaAs/InP photon-counting diode detectors in time-resolved photoluminescence measurements at wavelength greater than 1500 nm. When they were cooled to 77 K and used in conjunction with the time-correlated single-photon counting technique, the detectors were capable of an instrumental response of 230 ps and a noise equivalent power of 2x10(-17)W Hz(-1/2) . Preliminary measurement of a semiconductor heterostructure indicates sensitivity at photogenerated carrier densities as low as 10(14)cm (-3) . This development facilitates the detailed characterization of dominant recombination mechanisms in semiconductor optoelectronic materials and devices designed to operate in the third telecommunications spectral window. |
| first_indexed | 2024-03-07T01:45:51Z |
| format | Journal article |
| id | oxford-uuid:9863d842-1d2b-4f33-b97f-bf3fa9b33949 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T01:45:51Z |
| publishDate | 2001 |
| record_format | dspace |
| spelling | oxford-uuid:9863d842-1d2b-4f33-b97f-bf3fa9b339492022-03-27T00:06:37ZPicosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:9863d842-1d2b-4f33-b97f-bf3fa9b33949EnglishSymplectic Elements at Oxford2001Smith, JHiskett, PBuller, GWe report what is to our knowledge the first application of high-efficiency InGaAs/InP photon-counting diode detectors in time-resolved photoluminescence measurements at wavelength greater than 1500 nm. When they were cooled to 77 K and used in conjunction with the time-correlated single-photon counting technique, the detectors were capable of an instrumental response of 230 ps and a noise equivalent power of 2x10(-17)W Hz(-1/2) . Preliminary measurement of a semiconductor heterostructure indicates sensitivity at photogenerated carrier densities as low as 10(14)cm (-3) . This development facilitates the detailed characterization of dominant recombination mechanisms in semiconductor optoelectronic materials and devices designed to operate in the third telecommunications spectral window. |
| spellingShingle | Smith, J Hiskett, P Buller, G Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm. |
| title | Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm. |
| title_full | Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm. |
| title_fullStr | Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm. |
| title_full_unstemmed | Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm. |
| title_short | Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm. |
| title_sort | picosecond time resolved photoluminescence at detection wavelengths greater than 1500 nm |
| work_keys_str_mv | AT smithj picosecondtimeresolvedphotoluminescenceatdetectionwavelengthsgreaterthan1500nm AT hiskettp picosecondtimeresolvedphotoluminescenceatdetectionwavelengthsgreaterthan1500nm AT bullerg picosecondtimeresolvedphotoluminescenceatdetectionwavelengthsgreaterthan1500nm |