Mass enhancement and electron-hole coupling in InAs/GaSb bilayers studied by cyclotron resonance

We report a study of cyclotron resonance (CR) in a bilayer-bipolar InAs/GaSb structure and the influence of the spatial separation between the electrons and holes. At low magnetic fields we find that the cyclotron mass of the electrons can double when the electrons and holes have a very small separa...

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Những tác giả chính: Petchsingh, C, Nicholas, R, Takashina, K, Mason, N, Zeman, J
Định dạng: Conference item
Được phát hành: 2002