Tuning the ambipolar behaviour of organic field effect transistors via band engineering
We report on a method for fabricating balanced hole and electron transport in ambipolar organic field-effect transistors (OFETs) based on the co-evaporation of zinc-phthalocyanine (ZnPc) and its fluorinated derivative (F 8 ZnPc). The semiconducting behaviour of the OFET can be tuned continuously fro...
| Main Authors: | , , , , |
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| Format: | Journal article |
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AIP Publishing
2019
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| _version_ | 1797084018984878080 |
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| author | Warren, P Hardigree, J Lauritzen, A Nelson, J Riede, M |
| author_facet | Warren, P Hardigree, J Lauritzen, A Nelson, J Riede, M |
| author_sort | Warren, P |
| collection | OXFORD |
| description | We report on a method for fabricating balanced hole and electron transport in ambipolar organic field-effect transistors (OFETs) based on the co-evaporation of zinc-phthalocyanine (ZnPc) and its fluorinated derivative (F 8 ZnPc). The semiconducting behaviour of the OFET can be tuned continuously from unipolar p-type, with a hole mobility in the range of (1.7 ± 0.1) × 10 -4 cm 2 /Vs, to unipolar n-type, with an electron mobility of (1.0 ± 0.1) × 10 -4 cm 2 /Vs. Devices of the pristine ZnPc and F 8 ZnPc show a current on/off ratio of 10 5 . By co-evaporating the p-type ZnPc with the n-type F 8 ZnPc, we fabricate ambipolar transistors and complementary-like voltage inverters. For the ambipolar devices, the optimum balance between the hole and electron mobilities is found for the blend of 1:1.5 weight ratio with hole and electron mobilities of (8.3 ± 0.2) × 10 -7 cm 2 /Vs and (5.5 ± 0.1) × 10 -7 cm 2 /Vs, respectively. Finally we demonstrate application of the ambipolar devices in a complementary-like voltage inverter circuit with the performance comparable to an inverter based on separate ZnPc and F 8 ZnPc OFETs. |
| first_indexed | 2024-03-07T01:49:45Z |
| format | Journal article |
| id | oxford-uuid:99abe60a-3a4a-458d-a94d-eefc3cb226a5 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T01:49:45Z |
| publishDate | 2019 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | oxford-uuid:99abe60a-3a4a-458d-a94d-eefc3cb226a52022-03-27T00:16:00ZTuning the ambipolar behaviour of organic field effect transistors via band engineeringJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:99abe60a-3a4a-458d-a94d-eefc3cb226a5Symplectic Elements at OxfordAIP Publishing2019Warren, PHardigree, JLauritzen, ANelson, JRiede, MWe report on a method for fabricating balanced hole and electron transport in ambipolar organic field-effect transistors (OFETs) based on the co-evaporation of zinc-phthalocyanine (ZnPc) and its fluorinated derivative (F 8 ZnPc). The semiconducting behaviour of the OFET can be tuned continuously from unipolar p-type, with a hole mobility in the range of (1.7 ± 0.1) × 10 -4 cm 2 /Vs, to unipolar n-type, with an electron mobility of (1.0 ± 0.1) × 10 -4 cm 2 /Vs. Devices of the pristine ZnPc and F 8 ZnPc show a current on/off ratio of 10 5 . By co-evaporating the p-type ZnPc with the n-type F 8 ZnPc, we fabricate ambipolar transistors and complementary-like voltage inverters. For the ambipolar devices, the optimum balance between the hole and electron mobilities is found for the blend of 1:1.5 weight ratio with hole and electron mobilities of (8.3 ± 0.2) × 10 -7 cm 2 /Vs and (5.5 ± 0.1) × 10 -7 cm 2 /Vs, respectively. Finally we demonstrate application of the ambipolar devices in a complementary-like voltage inverter circuit with the performance comparable to an inverter based on separate ZnPc and F 8 ZnPc OFETs. |
| spellingShingle | Warren, P Hardigree, J Lauritzen, A Nelson, J Riede, M Tuning the ambipolar behaviour of organic field effect transistors via band engineering |
| title | Tuning the ambipolar behaviour of organic field effect transistors via band engineering |
| title_full | Tuning the ambipolar behaviour of organic field effect transistors via band engineering |
| title_fullStr | Tuning the ambipolar behaviour of organic field effect transistors via band engineering |
| title_full_unstemmed | Tuning the ambipolar behaviour of organic field effect transistors via band engineering |
| title_short | Tuning the ambipolar behaviour of organic field effect transistors via band engineering |
| title_sort | tuning the ambipolar behaviour of organic field effect transistors via band engineering |
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