A SIMPLE TECHNIQUE FOR MEASURING DOPING EFFECTS ON DISLOCATION-MOTION IN SILICON
Autors principals: | Roberts, S, Pirouz, P, Hirsch, P |
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Format: | Journal article |
Publicat: |
1983
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Ítems similars
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SIMPLE TECHNIQUE FOR MEASURING DOPING EFFECTS ON DISLOCATION MOTION IN SILICON.
per: Roberts, S, et al.
Publicat: (1983) -
TEM INVESTIGATION OF THE PLASTIC ZONE, DISLOCATION ROSETTES AND CRACKS AROUND VICKERS INDENTATIONS IN SILICON.
per: Samuels, J, et al.
Publicat: (1985) -
DOPING EFFECTS ON INDENTATION PLASTICITY AND FRACTURE IN GERMANIUM
per: Roberts, S, et al.
Publicat: (1985) -
SIMULTANEOUS OBSERVATION OF ALPHA-DISLOCATION AND BETA-DISLOCATION MOVEMENT AND THEIR EFFECT ON THE FRACTURE-BEHAVIOR OF GAAS
per: Warren, P, et al.
Publicat: (1984) -
EFFECTS OF DOPING ON MECHANICAL PROPERTIES OF SEMICONDUCTORS.
per: Hirsch, P, et al.
Publicat: (1986)