A SIMPLE TECHNIQUE FOR MEASURING DOPING EFFECTS ON DISLOCATION-MOTION IN SILICON

A SIMPLE TECHNIQUE FOR MEASURING DOPING EFFECTS ON DISLOCATION-MOTION IN SILICON

Čájet eará veršuvnnaid (1)

Bibliográfalaš dieđut
Váldodahkkit:	Roberts, S, Pirouz, P, Hirsch, P
Materiálatiipa:	Journal article
Almmustuhtton:	1983

Geahča maid

SIMPLE TECHNIQUE FOR MEASURING DOPING EFFECTS ON DISLOCATION MOTION IN SILICON.
Dahkki: Roberts, S, et al.
Almmustuhtton: (1983)

TEM INVESTIGATION OF THE PLASTIC ZONE, DISLOCATION ROSETTES AND CRACKS AROUND VICKERS INDENTATIONS IN SILICON.
Dahkki: Samuels, J, et al.
Almmustuhtton: (1985)

DOPING EFFECTS ON INDENTATION PLASTICITY AND FRACTURE IN GERMANIUM
Dahkki: Roberts, S, et al.
Almmustuhtton: (1985)

SIMULTANEOUS OBSERVATION OF ALPHA-DISLOCATION AND BETA-DISLOCATION MOVEMENT AND THEIR EFFECT ON THE FRACTURE-BEHAVIOR OF GAAS
Dahkki: Warren, P, et al.
Almmustuhtton: (1984)

EFFECTS OF DOPING ON MECHANICAL PROPERTIES OF SEMICONDUCTORS.
Dahkki: Hirsch, P, et al.
Almmustuhtton: (1986)

DISLOCATION DYNAMICS AND THE BRITTLE DUCTILE TRANSITION IN PRECRACKED SILICON
Dahkki: Hirsch, P, et al.
Almmustuhtton: (1989)

DISLOCATION DYNAMICS AND THE BRITTLE DUCTILE TRANSITION IN PRECRACKED SILICON
Dahkki: Hirsch, P, et al.
Almmustuhtton: (1989)

Simulation of the 'brittle-ductile transition in silicon single crystals using dislocation mechanics' - Comment
Dahkki: Hirsch, P, et al.
Almmustuhtton: (1997)

DISSOCIATION OF DISLOCATIONS IN DIAMOND
Dahkki: Pirouz, P, et al.
Almmustuhtton: (1983)

DISSOCIATION OF NEAR-SCREW DISLOCATIONS IN GERMANIUM AND SILICON
Dahkki: Gomez, A, et al.
Almmustuhtton: (1975)

MICRO-INDENTATION INVESTIGATION OF DOPING EFFECTS ON THE FRACTURE BEHAVIOR OF GERMANIUM.
Dahkki: Roberts, S, et al.
Almmustuhtton: (1986)

DISLOCATION MECHANISMS FOR TWINNING AND POLYTYPIC TRANSFORMATIONS IN SEMICONDUCTORS
Dahkki: Pirouz, P
Almmustuhtton: (1989)

Comment on the brittle-to-ductile transition: A cooperative dislocation generation instability; Dislocation dynamics and the strain-rate dependence of the transition temperature
Dahkki: Hirsch, P, et al.
Almmustuhtton: (1996)

STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 - PREFACE
Dahkki: Hirsch, P, et al.
Almmustuhtton: (1989)

STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 - PREFACE
Dahkki: Hirsch, P, et al.
Almmustuhtton: (1989)

'The brittle-to-ductile transition .1. A cooperative dislocation generation instability .2. Dislocation dynamics and the strain rate dependence of the transition temperature''' - Comment
Dahkki: Hirsch, P, et al.
Almmustuhtton: (1996)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
Dahkki: Wilshaw, P, et al.
Almmustuhtton: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
Dahkki: Wilshaw, P, et al.
Almmustuhtton: (1989)

DISLOCATION DYNAMICS AND BRITTLE-TO-DUCTILE TRANSITIONS
Dahkki: Roberts, S, et al.
Almmustuhtton: (1993)

On the locking of dislocations by oxygen in silicon
Dahkki: Senkader, S, et al.
Almmustuhtton: (2001)

Impurity locking of dislocations in silicon
Dahkki: Giannattasio, A, et al.
Almmustuhtton: (2004)

DISSOCIATION OF DISLOCATIONS IN SILICON
Dahkki: Ray, I, et al.
Almmustuhtton: (1971)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
Dahkki: Fell, T, et al.
Almmustuhtton: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
Dahkki: Fell, T, et al.
Almmustuhtton: (1989)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM
Dahkki: Wilshaw, P, et al.
Almmustuhtton: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.
Dahkki: Wilshaw, P, et al.
Almmustuhtton: (1983)

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
Dahkki: Wilshaw, P, et al.
Almmustuhtton: (1989)

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
Dahkki: Giannattasio, A, et al.
Almmustuhtton: (2004)

DISLOCATION ACTIVITY AND BRITTLE-DUCTILE TRANSITIONS IN SINGLE-CRYSTALS
Dahkki: Roberts, S, et al.
Almmustuhtton: (1994)

THE DYNAMICS OF EDGE DISLOCATION GENERATION ALONG A PLANE ORTHOGONAL TO A MODE-I CRACK
Dahkki: Hirsch, P, et al.
Almmustuhtton: (1989)

The segregation behaviour of oxygen at dislocations in silicon
Dahkki: Senkader, S, et al.
Almmustuhtton: (1999)

Locking of dislocations by oxygen in Cz-silicon
Dahkki: Senkader, S, et al.
Almmustuhtton: (1999)

Dislocation activity, stable crack motion, and the warm-prestressing effect in magnesium oxide
Dahkki: Booth, A, et al.
Almmustuhtton: (1994)

Dislocation motion and instability
Dahkki: Zhu, Y, et al.
Almmustuhtton: (2013)

Dislocation motion and instability
Dahkki: Zhu, Y, et al.
Almmustuhtton: (2013)

THE DYNAMICS OF DISLOCATION GENERATION AT CRACK TIPS AND THE DUCTILE-BRITTLE TRANSITION
Dahkki: Hirsch, P, et al.
Almmustuhtton: (1987)

DISLOCATION MOBILITY AND CRACK TIP PLASTICITY AT THE DUCTILE-BRITTLE TRANSITION
Dahkki: Hirsch, P, et al.
Almmustuhtton: (1988)

Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon
Dahkki: Alpass, C, et al.
Almmustuhtton: (2009)

Measurements of dislocation locking by near-surface ion-implanted nitrogen in Czochralski silicon
Dahkki: Alpass, C, et al.
Almmustuhtton: (2008)

EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS
Dahkki: A. V. Mudryi, et al.
Almmustuhtton: (2015-03-01)