Generalized conductivity model for polar semiconductors at terahertz frequencies
A theoretical framework is presented that calculates the conductivity of polar semiconductors at terahertz frequencies without resorting to phenomenological fit parameters, using an expression derived from the Boltzmann transport equation. The time-dependent photoconductivity of InAs and the tempera...
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| स्वरूप: | Journal article |
| भाषा: | English |
| प्रकाशित: |
2012
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