THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON

Show other versions (1)

Bibliographic Details
Main Authors:	Ourmazd, A, Wilshaw, P, Booker, G
Format:	Journal article
Language:	English
Published:	1983

Similar Items

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
by: Ourmazd, A, et al.
Published: (1983)

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC
by: Ourmazd, A, et al.
Published: (1982)

NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
by: Wilshaw, P, et al.
Published: (1985)

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
by: Wilshaw, P, et al.
Published: (1986)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM
by: Wilshaw, P, et al.
Published: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.
by: Wilshaw, P, et al.
Published: (1983)

An SEM EBIC study of the electronic properties of dislocations in silicon
by: Wilshaw, P, et al.
Published: (1984)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
by: Fell, T, et al.
Published: (1993)

THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
by: Ourmazd, A, et al.
Published: (1983)

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULT RIBBONS IN SILICON.
by: Ourmazd, A, et al.
Published: (1982)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
by: Fell, T, et al.
Published: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
by: Fell, T, et al.
Published: (1991)

EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
by: Wilshaw, P, et al.
Published: (1991)

AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
by: Galloway, S, et al.
Published: (1993)

ELECTRICAL BEHAVIOUR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING FAULTS.
by: Ourmazd, A, et al.
Published: (1982)

RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
by: Wilshaw, P, et al.
Published: (1989)

ON THE FORMATION OF BRIGHT EBIC CONTRASTS AT CRYSTAL DEFECTS
by: Blumtritt, H, et al.
Published: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
by: Wilshaw, P, et al.
Published: (1989)

THE ELECTRONIC-PROPERTIES OF DISLOCATIONS IN SILICON
by: Wilshaw, P, et al.
Published: (1989)

Dislocation locking in silicon by oxygen and oxygen transport at low temperatures
by: Senkader, S, et al.
Published: (2004)

Oxygen-dislocation interactions in silicon at temperatures below 700 degrees C: Dislocation locking and oxygen diffusion
by: Senkader, S, et al.
Published: (2001)

A room temperature cathodoluminescence study of dislocations in silicon
by: Stowe, D, et al.
Published: (2004)

Near-band gap luminescence at room temperature from dislocations in silicon
by: Stowe, D, et al.
Published: (2003)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
by: Fell, T, et al.
Published: (1989)

RECOMBINATION AT DISLOCATIONS IN THE DEPLETION REGION IN SILICON
by: Fell, T, et al.
Published: (1989)

Impurity locking of dislocations in silicon
by: Giannattasio, A, et al.
Published: (2004)

Dislocation locking by oxygen in silicon: New insights to oxygen diffusion at low temperatures
by: Senkader, S, et al.
Published: (2002)

On the locking of dislocations by oxygen in silicon
by: Senkader, S, et al.
Published: (2001)

The role of prismatic dislocation loops in the generation of glide dislocations in Cz-silicon
by: Giannattasio, A, et al.
Published: (2004)

The segregation behaviour of oxygen at dislocations in silicon
by: Senkader, S, et al.
Published: (1999)

Locking of dislocations by oxygen in Cz-silicon
by: Senkader, S, et al.
Published: (1999)

Generation of dislocation glide loops in Czochralski silicon
by: Giannattasio, A, et al.
Published: (2002)

Dislocation locking by nitrogen impurities in FZ-silicon
by: Giannattasio, A, et al.
Published: (2003)

THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE
by: Wilshaw, P
Published: (1989)

A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis
by: Breese, M, et al.
Published: (1998)

Understanding and optimising EBIC pn-junction characterisation from modelling insights
by: Zhou, R, et al.
Published: (2020)

Chemical etching to dissolve dislocation cores in multicrystalline silicon
by: Gregori, N, et al.
Published: (2012)

Nitrogen diffusion and interaction with dislocations in single-crystal silicon
by: Alpass, C, et al.
Published: (2009)

Chemical etching to dissolve dislocation cores in multicrystalline silicon
by: Gregori, N, et al.
Published: (2012)

The influence of nitrogen on dislocation locking in float-zone silicon
by: Murphy, J, et al.
Published: (2005)