Microfabrication and characterisation of gridded polycrystalline silicon field emitter devices
Using state of the art microfabrication techniques including high resolution electron beam lithography and plasma dry etching, uniform arrays of sharp polysilicon field emitters have been fabricated in gated configuration. Emission currents up to 2.5 mu A/tip have been obtained at 90 volts gate bias...
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| Médium: | Conference item |
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1997
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