An investigation of efficient room temperature luminescence from silicon which contains dislocations
This thesis presents an investigation of the phenomenon of efficient, room temperature luminescence from dislocation-engineered (DE) silicon. Previous work had demonstrated that the introduction of near-surface dislocation loops to a silicon substrate by boron ion implantation and high temperature a...
Main Authors: | Stowe, D, David John Stowe |
---|---|
Other Authors: | Wilshaw, P |
Format: | Thesis |
Language: | English |
Published: |
2006
|
Subjects: |
Similar Items
-
Near-band gap luminescence at room temperature from dislocations in silicon
by: Stowe, D, et al.
Published: (2003) -
A room temperature cathodoluminescence study of dislocations in silicon
by: Stowe, D, et al.
Published: (2004) -
The role of dislocations in producing efficient near-bandgap luminescence from silicon
by: Fraser, K, et al.
Published: (2007) -
Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon
by: Stowe, D, et al.
Published: (2005) -
Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing
by: Bohdan Pavlyk, et al.
Published: (2017-05-01)