Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors
<p>We describe a new synthetic methodology for the preparation of high quality, emission tuneable InP-based quantum dots (QDs) using a solid, air- and moisture-tolerant primary phosphine as a group-V precursor. This presents a significantly simpler synthetic pathway compared to the state-of-th...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
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Royal Society of Chemistry
2023
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| _version_ | 1797112937439035392 |
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| author | Wang, Y Howley, J Faria, EN Huang, C Carter-Searjeant, S Fairclough, S Kirkland, A Davis, JJ Naz, F Sajjad, MT Goicoechea, JM Green, M |
| author_facet | Wang, Y Howley, J Faria, EN Huang, C Carter-Searjeant, S Fairclough, S Kirkland, A Davis, JJ Naz, F Sajjad, MT Goicoechea, JM Green, M |
| author_sort | Wang, Y |
| collection | OXFORD |
| description | <p>We describe a new synthetic methodology for the preparation of high quality, emission tuneable InP-based quantum dots (QDs) using a solid, air- and moisture-tolerant primary phosphine as a group-V precursor. This presents a significantly simpler synthetic pathway compared to the state-of-the-art precursors currently employed in phosphide quantum dot synthesis which are volatile, dangerous and air-sensitive, <em>e.g.</em> P(Si(CH<small><sub>3</sub></small>)<small><sub>3</sub></small>)<small><sub>3</sub></small>.</p> |
| first_indexed | 2024-04-09T03:56:13Z |
| format | Journal article |
| id | oxford-uuid:9f8f1ce6-1d3e-4ae9-8dc0-c9b73bc97e92 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-04-09T03:56:13Z |
| publishDate | 2023 |
| publisher | Royal Society of Chemistry |
| record_format | dspace |
| spelling | oxford-uuid:9f8f1ce6-1d3e-4ae9-8dc0-c9b73bc97e922024-03-15T07:02:00ZPhosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductorsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:9f8f1ce6-1d3e-4ae9-8dc0-c9b73bc97e92EnglishSymplectic ElementsRoyal Society of Chemistry2023Wang, YHowley, JFaria, ENHuang, CCarter-Searjeant, SFairclough, SKirkland, ADavis, JJNaz, FSajjad, MTGoicoechea, JMGreen, M<p>We describe a new synthetic methodology for the preparation of high quality, emission tuneable InP-based quantum dots (QDs) using a solid, air- and moisture-tolerant primary phosphine as a group-V precursor. This presents a significantly simpler synthetic pathway compared to the state-of-the-art precursors currently employed in phosphide quantum dot synthesis which are volatile, dangerous and air-sensitive, <em>e.g.</em> P(Si(CH<small><sub>3</sub></small>)<small><sub>3</sub></small>)<small><sub>3</sub></small>.</p> |
| spellingShingle | Wang, Y Howley, J Faria, EN Huang, C Carter-Searjeant, S Fairclough, S Kirkland, A Davis, JJ Naz, F Sajjad, MT Goicoechea, JM Green, M Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors |
| title | Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors |
| title_full | Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors |
| title_fullStr | Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors |
| title_full_unstemmed | Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors |
| title_short | Phosphinecarboxamide based InZnP QDs – an air tolerant route to luminescent III–V semiconductors |
| title_sort | phosphinecarboxamide based inznp qds an air tolerant route to luminescent iii v semiconductors |
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