Photoluminescence studies of the formation of MgS/CdSe quantum dots grown by molecular beam epitaxy

The optical properties of MgS/CdSe quantum structures grown by molecular beam epitaxy are characterized by photoluminescence (PL) spectroscopy. The increase in the CdSe thickness from 1 to beyond 3 monolayers results in the formation of, at first, quantum wells (QWs) and then quantum dots (QDs) by S...

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Bibliographic Details
Main Authors: Funato, M, Bradford, C, Balocchi, A, Smith, J, Prior, K, Cavenett, B
Format: Conference item
Published: 2002
Description
Summary:The optical properties of MgS/CdSe quantum structures grown by molecular beam epitaxy are characterized by photoluminescence (PL) spectroscopy. The increase in the CdSe thickness from 1 to beyond 3 monolayers results in the formation of, at first, quantum wells (QWs) and then quantum dots (QDs) by Stranski-Krastanov growth. The PL temperature dependence measurements show clear difference in the optical properties of QWs and QDs.