Observation of a blocking to channeling transition for MeV protons at stacking faults in silicon.
Images of stacking faults in silicon have been produced using transmitted, channeled protons. They reveal that when the proton beam angle to the (111) channeling planes is slightly reater than the channeling critical angle, the mean energy loss of protons passing through a stacking fault is less tha...
| Asıl Yazarlar: | , , , , |
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| Materyal Türü: | Journal article |
| Dil: | English |
| Baskı/Yayın Bilgisi: |
1995
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| _version_ | 1826288325208571904 |
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| author | King, P Breese, M Smulders, P Wilshaw, P Grime, G |
| author_facet | King, P Breese, M Smulders, P Wilshaw, P Grime, G |
| author_sort | King, P |
| collection | OXFORD |
| description | Images of stacking faults in silicon have been produced using transmitted, channeled protons. They reveal that when the proton beam angle to the (111) channeling planes is slightly reater than the channeling critical angle, the mean energy loss of protons passing through a stacking fault is less than that of protons passing through virgin crystal. We interpret this as being caused by the conversion of the proton trajectories from blocked to channeled owing to the lattice translation at the stacking faults. Computer simulations are shown which verify this unexpected phenomenon. |
| first_indexed | 2024-03-07T02:11:59Z |
| format | Journal article |
| id | oxford-uuid:a0f7e3b7-f1f8-4f00-8a59-4977f26e1c1e |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T02:11:59Z |
| publishDate | 1995 |
| record_format | dspace |
| spelling | oxford-uuid:a0f7e3b7-f1f8-4f00-8a59-4977f26e1c1e2022-03-27T02:09:35ZObservation of a blocking to channeling transition for MeV protons at stacking faults in silicon.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:a0f7e3b7-f1f8-4f00-8a59-4977f26e1c1eEnglishSymplectic Elements at Oxford1995King, PBreese, MSmulders, PWilshaw, PGrime, GImages of stacking faults in silicon have been produced using transmitted, channeled protons. They reveal that when the proton beam angle to the (111) channeling planes is slightly reater than the channeling critical angle, the mean energy loss of protons passing through a stacking fault is less than that of protons passing through virgin crystal. We interpret this as being caused by the conversion of the proton trajectories from blocked to channeled owing to the lattice translation at the stacking faults. Computer simulations are shown which verify this unexpected phenomenon. |
| spellingShingle | King, P Breese, M Smulders, P Wilshaw, P Grime, G Observation of a blocking to channeling transition for MeV protons at stacking faults in silicon. |
| title | Observation of a blocking to channeling transition for MeV protons at stacking faults in silicon. |
| title_full | Observation of a blocking to channeling transition for MeV protons at stacking faults in silicon. |
| title_fullStr | Observation of a blocking to channeling transition for MeV protons at stacking faults in silicon. |
| title_full_unstemmed | Observation of a blocking to channeling transition for MeV protons at stacking faults in silicon. |
| title_short | Observation of a blocking to channeling transition for MeV protons at stacking faults in silicon. |
| title_sort | observation of a blocking to channeling transition for mev protons at stacking faults in silicon |
| work_keys_str_mv | AT kingp observationofablockingtochannelingtransitionformevprotonsatstackingfaultsinsilicon AT breesem observationofablockingtochannelingtransitionformevprotonsatstackingfaultsinsilicon AT smuldersp observationofablockingtochannelingtransitionformevprotonsatstackingfaultsinsilicon AT wilshawp observationofablockingtochannelingtransitionformevprotonsatstackingfaultsinsilicon AT grimeg observationofablockingtochannelingtransitionformevprotonsatstackingfaultsinsilicon |