Charge fluctuations at the Si-SiO2 interface and its effect on surface recombination in solar cells
The Si–SiO2 interface has and will continue to play a major role in the development of silicon photovoltaic devices. This work presents a detailed examination of how charge at or near this interface influences device performance. New understanding is identified on the effect of charge-induced potent...
| Những tác giả chính: | , , , , |
|---|---|
| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
Elsevier
2020
|