Charge fluctuations at the Si-SiO2 interface and its effect on surface recombination in solar cells
The Si–SiO2 interface has and will continue to play a major role in the development of silicon photovoltaic devices. This work presents a detailed examination of how charge at or near this interface influences device performance. New understanding is identified on the effect of charge-induced potent...
| 主要な著者: | , , , , |
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| フォーマット: | Journal article |
| 言語: | English |
| 出版事項: |
Elsevier
2020
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