Charge fluctuations at the Si-SiO2 interface and its effect on surface recombination in solar cells

The Si–SiO2 interface has and will continue to play a major role in the development of silicon photovoltaic devices. This work presents a detailed examination of how charge at or near this interface influences device performance. New understanding is identified on the effect of charge-induced potent...

Full beskrivning

Bibliografiska uppgifter
Huvudupphovsmän: Bonilla , RS, Al-Dhahir, I, Mingzhe, Y, Hamer, P, Altermatt, PP
Materialtyp: Journal article
Språk:English
Publicerad: Elsevier 2020