Pentacene homojunctions: Electron and hole transport properties and related photovoltaic responses

We report on organic p-i-n homojunctions composed of differently doped vacuum-deposited pentacene layers. We observe a remarkably high built-in voltage of 1.65 V. An analysis of the current-voltage characteristics under dark and illuminated conditions reveals that the open-circuit voltage is directl...

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Détails bibliographiques
Auteurs principaux: Harada, K, Riede, M, Leo, K, Hild, O, Elliott, C
Format: Journal article
Langue:English
Publié: American Physical Society 2008
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author Harada, K
Riede, M
Leo, K
Hild, O
Elliott, C
author_facet Harada, K
Riede, M
Leo, K
Hild, O
Elliott, C
author_sort Harada, K
collection OXFORD
description We report on organic p-i-n homojunctions composed of differently doped vacuum-deposited pentacene layers. We observe a remarkably high built-in voltage of 1.65 V. An analysis of the current-voltage characteristics under dark and illuminated conditions reveals that the open-circuit voltage is directly related to the built-in voltage and that the recombination process is influenced by the distinct charge transport properties of electrons and holes in the pentacene film. By a comparison with p-i-p and n-i-n single-carrier homojunctions, deep trap states located around 0.63 eV below the electron transport level are shown to influence the properties. © 2008 The American Physical Society.
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spelling oxford-uuid:a3b69425-62da-42c4-aaa3-ecc92583073c2022-03-27T02:28:56ZPentacene homojunctions: Electron and hole transport properties and related photovoltaic responsesJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:a3b69425-62da-42c4-aaa3-ecc92583073cEnglishSymplectic Elements at OxfordAmerican Physical Society2008Harada, KRiede, MLeo, KHild, OElliott, CWe report on organic p-i-n homojunctions composed of differently doped vacuum-deposited pentacene layers. We observe a remarkably high built-in voltage of 1.65 V. An analysis of the current-voltage characteristics under dark and illuminated conditions reveals that the open-circuit voltage is directly related to the built-in voltage and that the recombination process is influenced by the distinct charge transport properties of electrons and holes in the pentacene film. By a comparison with p-i-p and n-i-n single-carrier homojunctions, deep trap states located around 0.63 eV below the electron transport level are shown to influence the properties. © 2008 The American Physical Society.
spellingShingle Harada, K
Riede, M
Leo, K
Hild, O
Elliott, C
Pentacene homojunctions: Electron and hole transport properties and related photovoltaic responses
title Pentacene homojunctions: Electron and hole transport properties and related photovoltaic responses
title_full Pentacene homojunctions: Electron and hole transport properties and related photovoltaic responses
title_fullStr Pentacene homojunctions: Electron and hole transport properties and related photovoltaic responses
title_full_unstemmed Pentacene homojunctions: Electron and hole transport properties and related photovoltaic responses
title_short Pentacene homojunctions: Electron and hole transport properties and related photovoltaic responses
title_sort pentacene homojunctions electron and hole transport properties and related photovoltaic responses
work_keys_str_mv AT haradak pentacenehomojunctionselectronandholetransportpropertiesandrelatedphotovoltaicresponses
AT riedem pentacenehomojunctionselectronandholetransportpropertiesandrelatedphotovoltaicresponses
AT leok pentacenehomojunctionselectronandholetransportpropertiesandrelatedphotovoltaicresponses
AT hildo pentacenehomojunctionselectronandholetransportpropertiesandrelatedphotovoltaicresponses
AT elliottc pentacenehomojunctionselectronandholetransportpropertiesandrelatedphotovoltaicresponses