Surface ionisation of molecular H2 and atomic H Rydberg states at doped silicon surfaces
The detection of ions or electrons from the surface ionisation of molecular H2 and atomic H Rydberg states incident at doped Si surfaces is investigated experimentally to analyse the effect of the dopant charge distribution on the surface-ionisation processes. In both experimental studies, the molec...
Autors principals: | Sashikesh, G, So, E, Ford, MS, Softley, T |
---|---|
Format: | Conference item |
Publicat: |
Taylor and Francis Ltd.
2014
|
Ítems similars
-
Surface ionisation of molecular H-2 and atomic H Rydberg states at doped silicon surfaces
per: Sashikesh, G, et al.
Publicat: (2014) -
Ionization of Rydberg H2 molecules at doped silicon surfaces.
per: Sashikesh, G, et al.
Publicat: (2013) -
Detection of electrons in the surface ionization of H Rydberg atoms and H-2 Rydberg molecules
per: McCormack, E, et al.
Publicat: (2012) -
Detection of electrons in the surface ionization of H Rydberg atoms and H-2 Rydberg molecules
per: McCormack, E, et al.
Publicat: (2012) -
Charge Transfer of Rydberg H Atoms at a Metal Surface
per: So, E, et al.
Publicat: (2011)