Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands
The evaluation and comparison of the optical properties in the O and C bands of silicon nitride rib waveguides with integrated Ge2Sb2Te5 phase-change cells is reported. In straight rib waveguides, a high transmission contrast is observed in both bands when the Ge2Sb2Te5 cell is switched between stat...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
The Optical Society
2020
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| _version_ | 1797086822562529280 |
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| author | Faneca, J Carrillo, SG-C Gemo, E de Galarreta, CR Bucio, TD Gardes, FY Bhaskaran, H Pernice, WHP Wright, CD Baldycheva, A |
| author_facet | Faneca, J Carrillo, SG-C Gemo, E de Galarreta, CR Bucio, TD Gardes, FY Bhaskaran, H Pernice, WHP Wright, CD Baldycheva, A |
| author_sort | Faneca, J |
| collection | OXFORD |
| description | The evaluation and comparison of the optical properties in the O and C bands of silicon nitride rib waveguides with integrated Ge2Sb2Te5 phase-change cells is reported. In straight rib waveguides, a high transmission contrast is observed in both bands when the Ge2Sb2Te5 cell is switched between states, being up to 2.5 dB/μm in the C-band and 6.4 dB/μm in the O-band. In the case of silicon nitride ring resonator waveguides, high quality factor resonances (Q ∼ 105) are found in both bands, leading to the provision of an ON-OFF switch characterized by an extinction ratio of 12 and 18 dB in O and C bands respectively. Finally, with the view to provide a comparison of the wavelength-dependent optical switching of the phase-change cell, a 3-dimensional finite-element method simulation is performed and a comparison of the optical-to-thermal energy conversion in both bands given.
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| first_indexed | 2024-03-07T02:27:25Z |
| format | Journal article |
| id | oxford-uuid:a615813d-de99-4c0d-9f9d-51ed003b7fbf |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T02:27:25Z |
| publishDate | 2020 |
| publisher | The Optical Society |
| record_format | dspace |
| spelling | oxford-uuid:a615813d-de99-4c0d-9f9d-51ed003b7fbf2022-03-27T02:44:49ZPerformance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bandsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:a615813d-de99-4c0d-9f9d-51ed003b7fbfEnglishSymplectic ElementsThe Optical Society2020Faneca, JCarrillo, SG-CGemo, Ede Galarreta, CRBucio, TDGardes, FYBhaskaran, HPernice, WHPWright, CDBaldycheva, AThe evaluation and comparison of the optical properties in the O and C bands of silicon nitride rib waveguides with integrated Ge2Sb2Te5 phase-change cells is reported. In straight rib waveguides, a high transmission contrast is observed in both bands when the Ge2Sb2Te5 cell is switched between states, being up to 2.5 dB/μm in the C-band and 6.4 dB/μm in the O-band. In the case of silicon nitride ring resonator waveguides, high quality factor resonances (Q ∼ 105) are found in both bands, leading to the provision of an ON-OFF switch characterized by an extinction ratio of 12 and 18 dB in O and C bands respectively. Finally, with the view to provide a comparison of the wavelength-dependent optical switching of the phase-change cell, a 3-dimensional finite-element method simulation is performed and a comparison of the optical-to-thermal energy conversion in both bands given. |
| spellingShingle | Faneca, J Carrillo, SG-C Gemo, E de Galarreta, CR Bucio, TD Gardes, FY Bhaskaran, H Pernice, WHP Wright, CD Baldycheva, A Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands |
| title | Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands |
| title_full | Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands |
| title_fullStr | Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands |
| title_full_unstemmed | Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands |
| title_short | Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands |
| title_sort | performance characteristics of phase change integrated silicon nitride photonic devices in the o and c telecommunications bands |
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