Electrical breakdown of suspended mono- and few-layer tungsten disulfide via sulfur depletion identified by in situ atomic imaging
The high-bias and breakdown behavior of suspended mono- and few-layer WS2 was explored by in situ aberration-corrected transmission electron microscopy. The suspended WS2 devices were found to undergo irreversible breakdown at sufficiently high biases due to vaporization of the WS2. Simultaneous to...
Үндсэн зохиолчид: | Fan, Y, Robertson, A, Zhou, Y, Chen, Q, Zhang, X, Browning, N, Zheng, H, Rümmeli, M, Warner, J |
---|---|
Формат: | Journal article |
Хэл сонгох: | English |
Хэвлэсэн: |
American Chemical Society
2017
|
Ижил төстэй зүйлс
Ижил төстэй зүйлс
-
Atomic resolution imaging of the edges of catalytically etched suspended few-layer graphene.
-н: Schäffel, F, зэрэг
Хэвлэсэн: (2011) -
Atomic resolution imaging of the edges of catalytically etched suspended few-layer graphene
-н: Schäffel, F, зэрэг
Хэвлэсэн: (2011) -
Atomic structure of interconnected few-layer graphene domains.
-н: Robertson, A, зэрэг
Хэвлэсэн: (2011) -
Biexciton Formation in Bilayer Tungsten Disulfide
-н: He, Z, зэрэг
Хэвлэсэн: (2016) -
Towards Low-Temperature CVD Synthesis and Characterization of Mono- or Few-Layer Molybdenum Disulfide
-н: Sachin Shendokar, зэрэг
Хэвлэсэн: (2023-09-01)