Oxygen transport in Czochralski silicon investigated by dislocation locking experiments
Dislocation locking has been investigated in Czochralski silicon with different oxygen concentrations in the 350-850 °C temperature range. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which oxygen diffuses to th...
| Autors principals: | , , , |
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| Format: | Journal article |
| Idioma: | English |
| Publicat: |
2006
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