Controlling the orientation, edge geometry, and thickness of chemical vapor deposition graphene.

We report that the shape, orientation, edge geometry, and thickness of chemical vapor deposition graphene domains can be controlled by the crystallographic orientations of Cu substrates. Under low-pressure conditions, single-layer graphene domains align with zigzag edges parallel to a single &lt...

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Main Authors: Murdock, A, Koos, A, Britton, T, Houben, L, Batten, T, Zhang, T, Wilkinson, A, Dunin-Borkowski, R, Lekka, C, Grobert, N
Format: Journal article
Language:English
Published: 2013
_version_ 1797087325381984256
author Murdock, A
Koos, A
Britton, T
Houben, L
Batten, T
Zhang, T
Wilkinson, A
Dunin-Borkowski, R
Lekka, C
Grobert, N
author_facet Murdock, A
Koos, A
Britton, T
Houben, L
Batten, T
Zhang, T
Wilkinson, A
Dunin-Borkowski, R
Lekka, C
Grobert, N
author_sort Murdock, A
collection OXFORD
description We report that the shape, orientation, edge geometry, and thickness of chemical vapor deposition graphene domains can be controlled by the crystallographic orientations of Cu substrates. Under low-pressure conditions, single-layer graphene domains align with zigzag edges parallel to a single <101> direction on Cu(111) and Cu(101), while bilayer domains align to two directions on Cu(001). Under atmospheric pressure conditions, hexagonal domains also preferentially align. This discovery can be exploited to generate high-quality, tailored graphene with controlled domain thickness, orientations, edge geometries, and grain boundaries.
first_indexed 2024-03-07T02:34:11Z
format Journal article
id oxford-uuid:a83df5f5-20b4-49d5-916f-3506cc80dc60
institution University of Oxford
language English
last_indexed 2024-03-07T02:34:11Z
publishDate 2013
record_format dspace
spelling oxford-uuid:a83df5f5-20b4-49d5-916f-3506cc80dc602022-03-27T03:00:05ZControlling the orientation, edge geometry, and thickness of chemical vapor deposition graphene.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:a83df5f5-20b4-49d5-916f-3506cc80dc60EnglishSymplectic Elements at Oxford2013Murdock, AKoos, ABritton, THouben, LBatten, TZhang, TWilkinson, ADunin-Borkowski, RLekka, CGrobert, NWe report that the shape, orientation, edge geometry, and thickness of chemical vapor deposition graphene domains can be controlled by the crystallographic orientations of Cu substrates. Under low-pressure conditions, single-layer graphene domains align with zigzag edges parallel to a single <101> direction on Cu(111) and Cu(101), while bilayer domains align to two directions on Cu(001). Under atmospheric pressure conditions, hexagonal domains also preferentially align. This discovery can be exploited to generate high-quality, tailored graphene with controlled domain thickness, orientations, edge geometries, and grain boundaries.
spellingShingle Murdock, A
Koos, A
Britton, T
Houben, L
Batten, T
Zhang, T
Wilkinson, A
Dunin-Borkowski, R
Lekka, C
Grobert, N
Controlling the orientation, edge geometry, and thickness of chemical vapor deposition graphene.
title Controlling the orientation, edge geometry, and thickness of chemical vapor deposition graphene.
title_full Controlling the orientation, edge geometry, and thickness of chemical vapor deposition graphene.
title_fullStr Controlling the orientation, edge geometry, and thickness of chemical vapor deposition graphene.
title_full_unstemmed Controlling the orientation, edge geometry, and thickness of chemical vapor deposition graphene.
title_short Controlling the orientation, edge geometry, and thickness of chemical vapor deposition graphene.
title_sort controlling the orientation edge geometry and thickness of chemical vapor deposition graphene
work_keys_str_mv AT murdocka controllingtheorientationedgegeometryandthicknessofchemicalvapordepositiongraphene
AT koosa controllingtheorientationedgegeometryandthicknessofchemicalvapordepositiongraphene
AT brittont controllingtheorientationedgegeometryandthicknessofchemicalvapordepositiongraphene
AT houbenl controllingtheorientationedgegeometryandthicknessofchemicalvapordepositiongraphene
AT battent controllingtheorientationedgegeometryandthicknessofchemicalvapordepositiongraphene
AT zhangt controllingtheorientationedgegeometryandthicknessofchemicalvapordepositiongraphene
AT wilkinsona controllingtheorientationedgegeometryandthicknessofchemicalvapordepositiongraphene
AT duninborkowskir controllingtheorientationedgegeometryandthicknessofchemicalvapordepositiongraphene
AT lekkac controllingtheorientationedgegeometryandthicknessofchemicalvapordepositiongraphene
AT grobertn controllingtheorientationedgegeometryandthicknessofchemicalvapordepositiongraphene