Neidio i'r cynnwys
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文(繁體)
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Iaith
Pob Maes
Teitl
Awdur
Pwnc
Rhif Galw
ISBN/ISSN
Tag
Canfod
Uwch
Wavelength shifting of adjacen...
Dyfynnu hwn
Anfonwch hwn fel neges destun
E-bostio hwn
Argraffu
Allforio Cofnod
Allforio i RefWorks
Allforio i EndNoteWeb
Allforio i EndNote
Permanent link
Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing
Manylion Llyfryddiaeth
Prif Awduron:
Liu, X
,
Lu, W
,
Chen, X
,
Shen, S
,
Tan, H
,
Yuan, S
,
Jagadish, C
,
Johnston, M
,
Dao, L
,
Gal, M
,
Zou, J
,
Cockayne, D
Fformat:
Journal article
Cyhoeddwyd:
2000
Daliadau
Disgrifiad
Eitemau Tebyg
Dangos Staff
Disgrifiad
Crynodeb:
Eitemau Tebyg
V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing
gan: Kim, Y, et al.
Cyhoeddwyd: (1996)
Carrier transfer between V-grooved quantum wire and vertical quantum well
gan: Lu, W, et al.
Cyhoeddwyd: (2001)
Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
gan: Zhao, Q, et al.
Cyhoeddwyd: (2000)
Influence on GaAs/AlGaAs quantum well infrared photodetector of proton implantation and rapid thermal annealing
gan: Li, N, et al.
Cyhoeddwyd: (2000)
Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wires modified by selective implantation and annealing
gan: Liu, X, et al.
Cyhoeddwyd: (1999)