Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing

Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing

Detalles Bibliográficos
Main Authors:	Liu, X, Lu, W, Chen, X, Shen, S, Tan, H, Yuan, S, Jagadish, C, Johnston, M, Dao, L, Gal, M, Zou, J, Cockayne, D
Formato:	Journal article
Publicado:	2000

Títulos similares

V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing
por: Kim, Y, et al.
Publicado: (1996)

Carrier transfer between V-grooved quantum wire and vertical quantum well
por: Lu, W, et al.
Publicado: (2001)

Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires
por: Zhao, Q, et al.
Publicado: (2000)

Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wires modified by selective implantation and annealing
por: Liu, X, et al.
Publicado: (1999)

Influence on GaAs/AlGaAs quantum well infrared photodetector of proton implantation and rapid thermal annealing
por: Li, N, et al.
Publicado: (2000)

Proton implantation and rapid thermal annealing effects on GaAs/AlGaAs quantum well infrared photodetectors
por: Li, N, et al.
Publicado: (1999)

Optical transition in infrared photodetector based on V-groove Al0.5Ga0.5As/GaAs multiple quantum wire
por: Fu, Y, et al.
Publicado: (2001)

The role of vertical quantum wells in carrier trapping in v-groove quantum wire lasers
por: Kiener, C, et al.
Publicado: (1996)

The role of vertical quantum wells in carrier trapping in v-groove quantum wire lasers
por: Kiener, C, et al.
Publicado: (1995)

Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing
por: Yuan, S, et al.
Publicado: (1997)

Carrier relaxation and localisation in v-groove quantum wires
por: Roshan, R, et al.
Publicado: (2001)

2D-1D crossover from quantum well to quantum wire behaviour in GaAs v-groove structures
por: Roshan, R, et al.
Publicado: (2002)

Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers
por: Fu, L, et al.
Publicado: (1999)

Improved carrier collection in intermixed InGaAs/GaAs quantum wells
por: Dao, L, et al.
Publicado: (1998)

HOT-CARRIER RELAXATION IN GAAS V-GROOVE QUANTUM WIRES
por: Maciel, A, et al.
Publicado: (1995)

Optical studies of modulation-doped v-groove quantum wires
por: Kim, J, et al.
Publicado: (2000)

Annealing effects on the microstructure of Ge/Si(001) quantum dots
por: Liao, X, et al.
Publicado: (2001)

Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate
por: Kim, Y, et al.
Publicado: (1996)

Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire
por: Fu, Y, et al.
Publicado: (2000)

TEM study of compositional profile in AlGaAs/GaAs quantum wells
por: Zou, J, et al.
Publicado: (1998)

Carrier relaxation in GaAs v-groove quantum wires and the effects of localization
por: Cade, N, et al.
Publicado: (2004)

Electron transport in modulation-doped GaAs v-groove quantum wires
por: Schwarz, A, et al.
Publicado: (2000)

HOT-CARRIER PHOTOLUMINESCENCE FROM GAAS V-GROOVE QUANTUM WIRES
por: Maciel, A, et al.
Publicado: (1994)

Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
por: Yuan, S, et al.
Publicado: (1998)

Fermi-edge singularities in single modulation-doped v-groove quantum wires
por: Hauert, M, et al.
Publicado: (2001)

ELECTRONIC STATES IN GAAS V-GROOVE QUANTUM-WIRE STRUCTURES WITH SUPERLATTICE BARRIERS
por: Kiener, C, et al.
Publicado: (1995)

Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells
por: Renata Butkutė, et al.
Publicado: (2017-06-01)

Interdiffused quantum-well infrared photodetectors for color sensitive arrays
por: Johnston, M, et al.
Publicado: (1999)

Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
por: Buda M, et al.
Publicado: (2007-01-01)

3D-to-1D carrier scattering in GaAs V-groove quantum wires
por: Kiener, C, et al.
Publicado: (1996)

Self-consistent treatment of v-groove quantum wire band structure in no parabolic approximation
por: Crnjanski Jasna V., et al.
Publicado: (2004-01-01)

Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructures.
por: Zou, J, et al.
Publicado: (1994)

Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
por: Leon, R, et al.
Publicado: (1996)

The morphology and composition of quantum dots
por: Cockayne, D, et al.
Publicado: (2001)

Fermi-edge singularities in the photoluminescence spectrum of modulation-doped GaAs v-groove quantum wires
por: Kim, J, et al.
Publicado: (2000)

Optical measurements of carrier relaxation and transport in single GaAs v-groove quantum wire structures
por: Cade, N, et al.
Publicado: (2002)

Longitudinal photocurrent spectroscopy of a single GaAs/AlGaAs v-groove quantum wire.
por: Cade, N, et al.
Publicado: (2005)

Electron states, magneto-transport and carrier dynamics in modulation-doped V-groove quantum wires
por: Maciel, A, et al.
Publicado: (1998)

Quantum error mitigation in quantum annealing
por: Jack Raymond, et al.
Publicado: (2025-03-01)

Reduced carrier cooling in GaAs v-groove quantum wires due to non-equilibrium phonon population
por: Freyland, J, et al.
Publicado: (1996)