Towards cavity quantum electrodynamics and coherent control with single InGaN/GaN quantum dots

Míreanna comhchosúla

• Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
  de réir: Jarjour, A, et al.
  Foilsithe / Cruthaithe: (2007)
• Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
  de réir: Na, J, et al.
  Foilsithe / Cruthaithe: (2006)
• Time-integrated and time-resolved optical studies of InGaN quantum dots
  de réir: Robinson, J, et al.
  Foilsithe / Cruthaithe: (2005)
• Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field
  de réir: Robinson, J, et al.
  Foilsithe / Cruthaithe: (2005)
• Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy
  de réir: Na, J, et al.
  Foilsithe / Cruthaithe: (2005)