Nanoelectromechanical switch with low voltage drive
The triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (∼4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-a...
| 主要な著者: | , , , , , , , , , |
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| フォーマット: | Journal article |
| 言語: | English |
| 出版事項: |
2008
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| _version_ | 1826289938820235264 |
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| author | Jang, J Cha, S Choi, Y Butler, T Kang, D Hasko, D Jung, J Jin, Y Kim, J Amaratunga, G |
| author_facet | Jang, J Cha, S Choi, Y Butler, T Kang, D Hasko, D Jung, J Jin, Y Kim, J Amaratunga, G |
| author_sort | Jang, J |
| collection | OXFORD |
| description | The triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (∼4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-alignment. The thickness of the insulator determines the width of the gap and the etching process, used to produce the vertical gate, removes the need for a complicated lithography step. The low drive voltage increases device stability and reliability and allows the device to be deployed in a wide range of applications. © 2008 American Institute of Physics. |
| first_indexed | 2024-03-07T02:36:33Z |
| format | Journal article |
| id | oxford-uuid:a8f907c8-ff34-42dd-bb20-0cd3f064b6a6 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T02:36:33Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | oxford-uuid:a8f907c8-ff34-42dd-bb20-0cd3f064b6a62022-03-27T03:05:19ZNanoelectromechanical switch with low voltage driveJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:a8f907c8-ff34-42dd-bb20-0cd3f064b6a6EnglishSymplectic Elements at Oxford2008Jang, JCha, SChoi, YButler, TKang, DHasko, DJung, JJin, YKim, JAmaratunga, GThe triode structure vertical carbon nanotube based nanoelectromechanical switch shows excellent low voltage drive (∼4.5 V), owing to its vertical gate and the narrow gap between structural elements. The insulator deposition and the selective etching process steps simplify fabrication through self-alignment. The thickness of the insulator determines the width of the gap and the etching process, used to produce the vertical gate, removes the need for a complicated lithography step. The low drive voltage increases device stability and reliability and allows the device to be deployed in a wide range of applications. © 2008 American Institute of Physics. |
| spellingShingle | Jang, J Cha, S Choi, Y Butler, T Kang, D Hasko, D Jung, J Jin, Y Kim, J Amaratunga, G Nanoelectromechanical switch with low voltage drive |
| title | Nanoelectromechanical switch with low voltage drive |
| title_full | Nanoelectromechanical switch with low voltage drive |
| title_fullStr | Nanoelectromechanical switch with low voltage drive |
| title_full_unstemmed | Nanoelectromechanical switch with low voltage drive |
| title_short | Nanoelectromechanical switch with low voltage drive |
| title_sort | nanoelectromechanical switch with low voltage drive |
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