FRACTURE AND CRACK TIP PLASTICITY IN SILICON AND GALLIUM-ARSENIDE

Eitemau Tebyg

• PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE
  gan: Demenet, J, et al.
  Cyhoeddwyd: (1989)
• RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
  gan: Wilshaw, P, et al.
  Cyhoeddwyd: (1989)
• VLSI fabrication principles : silicon and gallium arsenide /
  gan: 359597 Ghandi, Sorab K.
  Cyhoeddwyd: (1994)
• VLSI fabrication principles: silicon and gallium arsenide/
  gan: 359597 Ghandi, Sorab K.
  Cyhoeddwyd: (1983)
• Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)
  gan: P. G. Gucciardi, et al.
  Cyhoeddwyd: (2011-09-01)