Ítems similars
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PLASTICITY AND DISLOCATION MOBILITIES AT LOW-TEMPERATURE IN SILICON AND GALLIUM-ARSENIDE
per: Demenet, J, et al.
Publicat: (1989) -
RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
per: Wilshaw, P, et al.
Publicat: (1989) -
VLSI fabrication principles : silicon and gallium arsenide /
per: 359597 Ghandi, Sorab K.
Publicat: (1994) -
VLSI fabrication principles: silicon and gallium arsenide/
per: 359597 Ghandi, Sorab K.
Publicat: (1983) -
Light depolarization effects in tip enhanced Raman spectroscopy of silicon (001) and gallium arsenide (001)
per: P. G. Gucciardi, et al.
Publicat: (2011-09-01)