NONLINEAR EXCITONIC OPTICAL-ABSORPTION IN GAINAS/INP QUANTUM-WELLS

We have studied the saturation of optical absorption in GaInAs/InP quantum wells at room temperature. Using optical excitation from a tunable cw Co:MgF2 laser, we find a saturation intensity of 70 W cm -2 when exciting resonantly at the n=1 heavy-hole exciton, and we deduce values of the nonlinear a...

詳細記述

書誌詳細
主要な著者: Fox, A, Maciel, A, Shorthose, M, Ryan, J, Scott, M, Davies, J, Riffat, J
フォーマット: Journal article
言語:English
出版事項: 1987
その他の書誌記述
要約:We have studied the saturation of optical absorption in GaInAs/InP quantum wells at room temperature. Using optical excitation from a tunable cw Co:MgF2 laser, we find a saturation intensity of 70 W cm -2 when exciting resonantly at the n=1 heavy-hole exciton, and we deduce values of the nonlinear absorption and refraction coefficients -60 cm W-1 and -0.3 cm2 kW-1, respectively. The saturation intensity in the quantum well is significantly lower than in bulk GaInAs, and also in GaAs quantum wells.