Using growth kinetics for nanoengineering of Si-Ge surfaces

समान संसाधन

• Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
  द्वारा: Goldfarb, I, और अन्य
  प्रकाशित: (1999)
• Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
  द्वारा: Owen, J, और अन्य
  प्रकाशित: (1997)
• Competing growth mechanisms of Ge/Si(001) coherent clusters
  द्वारा: Goldfarb, I, और अन्य
  प्रकाशित: (1997)
• Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
  द्वारा: Goldfarb, I, और अन्य
  प्रकाशित: (1997)
• Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
  द्वारा: Goldfarb, I, और अन्य
  प्रकाशित: (1997)