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Using growth kinetics for nano...
Čujuhandieđut
Deakstadieđáhus
Sádde šleađgaboasttain
Čálit
Doalvvo čujuhusa
Doalvun: RefWorks
Doalvun: EndNoteWeb
Doalvun: EndNote
Bissovaš liŋka
Using growth kinetics for nanoengineering of Si-Ge surfaces
Bibliográfalaš dieđut
Váldodahkkit:
Goldfarb, I
,
Briggs, G
Materiálatiipa:
Conference item
Almmustuhtton:
1998
Oažžasuvvandieđut
Govvádus
Geahča maid
Bargiidšearbma
Govvádus
Čoahkkáigeassu:
Geahča maid
Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
Dahkki: Goldfarb, I, et al.
Almmustuhtton: (1999)
Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
Dahkki: Owen, J, et al.
Almmustuhtton: (1997)
Competing growth mechanisms of Ge/Si(001) coherent clusters
Dahkki: Goldfarb, I, et al.
Almmustuhtton: (1997)
Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
Dahkki: Goldfarb, I, et al.
Almmustuhtton: (1997)
Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
Dahkki: Goldfarb, I, et al.
Almmustuhtton: (1997)