Using growth kinetics for nanoengineering of Si-Ge surfaces
Autors principals: | Goldfarb, I, Briggs, G |
---|---|
Format: | Conference item |
Publicat: |
1998
|
Ítems similars
-
Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
per: Goldfarb, I, et al.
Publicat: (1999) -
Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
per: Owen, J, et al.
Publicat: (1997) -
Competing growth mechanisms of Ge/Si(001) coherent clusters
per: Goldfarb, I, et al.
Publicat: (1997) -
Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
per: Goldfarb, I, et al.
Publicat: (1997) -
Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
per: Goldfarb, I, et al.
Publicat: (1997)