Using growth kinetics for nanoengineering of Si-Ge surfaces
Egile Nagusiak: | Goldfarb, I, Briggs, G |
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Formatua: | Conference item |
Argitaratua: |
1998
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Antzeko izenburuak
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Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
nork: Owen, J, et al.
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Competing growth mechanisms of Ge/Si(001) coherent clusters
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Argitaratua: (1997) -
Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
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Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
nork: Goldfarb, I, et al.
Argitaratua: (1997)